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SERIES
EQUIVALENT
4 Rout
1+ (Rout / Xp)”
Rout
Xs= Rs (4 )
x
Parallel and series equivalent
¢ Lg formulas used for conversion.
llector of Qi and the 5-ohm base
he shortcoming of this technique
be lac! of selectivity between stages, but
vantage is in the broadband charac-
the coupling system. The phasing
he diagram near T1 and T2 indi-
rrect electrical relationship of the
three networks shown in Figs 15, 16
will provide practical solutions to
is assumed that the output
ace being matched is lower than the
the case, the network (the cirenit
tween the points marked A and
‘be turned around to provide the
transformation.
ly, the output impedance of a
is given as a resistance in parallel
capacitance, Coy. To use the design
ons for these three networks, the out-
dance must first be converted from
el form (Roy; and C,,;) to the
alent series form (R, and C,). These
lent circuits and the equations for
n are given in Fig 18. Often the
‘capacitance is small enough that it
neglected; the resulting error is
ated for by using variable
nents in the network.
#¢ low-pass T network (Fig 17) has the
‘ of matching a wide range of
nces with practical component
Some designers feel that of the
etworks used in solid-state work,
work is best in terms of collector
. The harmonic suppression
ed by the T network varies with the
ymation ratio and the total Q of the
fork. For stages feeding an antenna,
onal harmonic suppression will nor-
ye needed. This is also true for net-
i | and 2. These three networks are
ed in detail in Motorola Application
WAN-267. Another excellent paper on
a was written by Becciolini,
la Application Note AN-721.
ke equations for networks 1, 2 and 3
taken from AN-267. That paper con-
ere
ge eee ee
RFC1, RFC2 = 4Za1 (1.5uH)
NETWORK 3
DESIGN EXAMPLE
Voz «144
Ror * = = ee = 720
2P, 20
1
X= ————_——__—_________ = 4547
out = (2x x 3.5 x 10° x 100 x 10-14)
R te
Rg = —————— = = 7229
1 + (R,J/X,)* 1 + (7.2/454.7)?
Re 7.2
aves pee hs (40 ee
Xo, = Rg 4 7.0 lat 0.119
R, = 502
Qver4
Xi, = (RQ) + Xo. = (7.0 x 4) + 0.11 = 28.19
LtuH) = it = ae 1.28 wH
HH) = a5 f(MHz) PREIS Th wae
Ry, = A,(1 + Q2) = 7.2 (1 + 44) = 122.4
- Ry 122.4 ; A
L= RL —5O = =k (Total Q = 4 + 1.2 = 5.2)
Xs = RQ) = 50 x 1.2 = 600
ys 60
I) ee ee = Ky |
2xf(MHz) 2x x 3.5
Ry 122.4
a= oo = = 235 0
(Q, + Q,) (4 + 1.2)
1 1
DOSS Cerys: Se op Pere ARPS Lm Sada
Fig 19 — A practical example of network no. 3 and the solution to the network design.
tains computer solutions to these networks
and others, with tabular information for
various values of Q and source impedances.
A fixed load value of 50 ohms is the base
for the tabular data.
A design example for network 3 is given
in Fig 19. The solutions for the other two
networks follow the same general trend, so
examples for networks 1 and 2 will not be
given. In Fig 19 the component ‘‘C,,,’’ is
taken from the manufacturer’s data sheet.
If it is not available, it can be ignored at
the expense of a slight mathematical error
in the network determination. By making
Cl variable the network can be made to
approximate the correct transformation
ratio. At the lower frequencies C1 will be
fairly large in value. This may require a
fixed-value silver-mica capacitor in parallel
with a mica compression trimmer to obtain
the exact value of capacitance needed. The
equations will seldom yield standard values
of capacitance.
L1 and L2 of Fig 19 can be wound on
powdered-iron toroid cores of suitable
cross-sectional area for the power involved.
This is explained in an earlier chapter of
this book. L1 and L2 should be separated
by mounting them apart and at right
angles. Alternatively, a shield can be used
between the inductors. This will prevent
unwanted capacitive and inductive coupling
Radio Transmitting Principles 11-11
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AN-210
Application Note
FM MODULATION CAPABILITIES OF
EPICAP VVC’S
Prepared by
Dick Schell
Microwave Devices Group
The author shows by empirical
methods that the frequency vs. volt-
age curve for Epicap voltage vari-
able capacitors is linear for small
(sufficient for most FM modulator
applications) voltage variations.
A rigorous mathematical explana-
tion of this linear inter-dependence
follows the empirical demonstration.
MOTOROLA Semiconductor Products Inc.
INTRODUCTION
In most applications FM modulation is accomplished
by one of three methods. A mechanical modulator using
a capacitor microphone is the simplest system, but is
seldom used, The capacitor microphone, being a delicate
mechanical device, must be handled carefully. Also, it
lacks wide capacity-variation capabilities restricting its
application greatly. Finally, it requires a pressure wave
input, and, consequently, is not suitable for telemetry
applications.
A second system employs a tube whose reactance varies
with the modulation signal, and thereby varies the fre-
quency of the oscillator stage used to generate the RF
signal, This system has been quite popular, and, in the
appropriate environment, functions quite well. As with
other electron tube devices it is relatively large; it is
easily breakable; and it requires filament power as well
as a high-voltage supply.
A third system, usually called the 'phase-angle modu-
lation system"' employs a combining network to alter the
instantaneous frequency of the RF energy already gen-
erated by the oscillator stage, Combining networks usually
use triodes, although transistors may be used also, Until
only recently, transistors have not been used intensively
in these applications, due to their power-handling limi-
tations at high frequencies, Naturally, the triodes suffer
from the same limitations as does the reactance tube.
Many modern RF systems, particulary those used in
the military and aerospace fields, are subjected to envi-
ronmental stresses which are extremely severe. Solid-
state devices with their built-in strength are in general
superior to the mechanical and electron tube devices
mentioned in the preceding paragraph for these applica-
tions. Some of these applications also require high minia-
turization can only be achieved with solid-state devices.
RFC 10 pH
MPS6511
FIGURE 1
Let us consider the desirability of using voltage variable
capacitance diodes (VVC) as the variable elementfor FM
modulator applications. Many people mistakenly believe
that the nonlinear relationship between the voltage across
a VVC and its capacity precludes its use in FM modula-
tion applications. In this paper it will be shown that the
Motorola EPICAPTMyvc capacity vs. voltage curve
varies as (approximately) the inverse 1/2 power and
that for most FM modulation applications, this capacity/
voltage variation is sufficiently linear for good results.
In order to demonstrate thefeasibility of Epicap VVC's
for FM modulator applications, the author employs an
oscillator circuit, similar to many actual FM modulators,
to determine the actual oscillator frequency variationfor
a given diode voltage variation, From the results of this
test it will be shown that over a typical FM bandwidth of
150 kHz Epicap VVCs are suitable for FM modulation
applications,
Following the discussion of the bench test, a derivation
of the expected theoretical capabilities of the Epicap VVC
(for FM modulator applications) is presented. In con-
clusion it is shown that the theoretical relationship and
the experimental data obtained from the test oscillator
are in good agreement.
THE BENCH TEST
Before proceeding with a description of the oscillator
circuit it should be pointed out that the reader wishing
more information on Epicap VVS's should consult appen-
dix A of this paper. If additional applications information
on VVC's or complete data sheets are desired they may
be obtained by writing to Motorola Semiconductor Pro-
ducts Inc., Technical Information Center, Phoenix, Ari-
zona 85001 (P.O. Box 955). +
The oscillator circuit, illustrated in Figure 1, employs
a Motorola MPS6511 transistor, designed especially for
ee
Ls 5-1/2 TURNS
#22 WIRE
1/2":DiA.
4-30 pF
O
Lo 7-1/2 TURNS
#22 WIRE
1/2 DIA;
Circuit diagrams are included as a means of illustrating typical semiconductor applications, consequently, complete in-
formation sufficient for construction purposes, is not necessarily given.
been carefully checked, and is believed to be entirely reliable.
Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license un-
der the patent rights of Motorola Inc. or others.
The information in this application note has
However, no responsibility is assumed for inaccuracies.
al)
oscillator applications. The oscillator frequency is 52
MHz. The Epicap VVC chosen for this test circuit is the
Motorola MV1876, a silicon epitaxial passivated diode,
rated at 33 pF for a reverse bias voltage of -4 volts.
Referring to the schematic, Figure 1, Ly and Cg are
used to tune out unwanted harmonics; their combined
effect approaches a short circuit at the frequency of os-
cillation, The 6.8 wH RFC and the 24 pF capacitor in the
input circuit are used to isolate the externalinput circuit
from the RF circuit of the oscillator. At audio frequencies,
however, there is little attenuation from these devices;
thus, the input voltage is applied between ground and the
positive side of the voltage-variable-capacitor.
Circuit operation was limited to voltage inputs of +200
mV or less, with the frequency deviations onthe order of
+60 kHz or less. Referring to Figure 2,a plot of oscilla-
tor frequency vs, input voltage, it can be seen that rela-
tively good linearity can be obtained to at least +75 kHz
making the Epical VVC applicable for commercial FM
use (commercial FM is limitedto a deviation of +75 kHz).
Using a frequency doubler in conjunction with the FM
modulator would give good linearity with an allowable
frequency deviation of +120 kHz, and a center frequency
of 104 MHz.
THEORETICAL ANALYSIS OF EPICAP VVC
PERFORMANCE IN OSCILLATOR CIRCUIT
In this section we shall analyze the Epicap VVC per-
formance in the test circuit. In order to do this we shall
derive Aw= f{(AV), and show that for small AV's,
V. Many of the equations used in this section are
derived in Appendix B; the reader should refer to that
Appendix for the details.
Let the value of the input voltage be represented by AV.
The input voltage is the amount by whichthe reverse bias
voltage under audio frequency modulation deviates from
its quiescent value under no signal conditions.
The polarity of AV is chosen such that a positive AV
corresponds to an increase in the VVC reverse bias volt-
age. With reference to Figure 1, it can be seen that the
quiescent value of V, that is, when AV = 0, is 15 volts.
Consequently, the reverse bias voltage across the VVC
at any given time may be given by 15 + AV, where AV
can be either positive, negative, or zero.
RANGE OF LINEAR OPERATION
The diode capacitance Cp is given by the equation*
where Cp = total diode capacitance
V =reverse bias voltage across the diode
Vj and V9 are two values of the voltage about the
quiescent value, and Cp , and Cpg are their cor-
responding diode capacitances.
InC../ Inc Pit 9
D2 D1 \ 2. Cag PS CNL.
aS ITE os Si le (1)
In (V/V) hey Va- by Vi
Clearly, a variation in Cp results in a change in the
frequency of oscillation. In order to derive Aw=f (AV),
we first derive Aw=f(AC)), then ACp =f (AV). By
combining the latter two results we naturally arrive at
the first result. The derivation of Aw=f ( ACp), given
in Appendix B, results in the expression:
w, (Kg - Ky)
ING
MoS SS
2w (K, + Cp) D
where Ore. Kg and K7 are constants determined by the
circuit parameters defined in Appendix B.
Since these derivations are carried out in detail in the
Appendix B they need not be repeated here, however, it
is instructive to examine which approximations have been
made in the derivation, and, consequently, limit the ac-
curacy of the result. In the Appendix we start with the
relation:
*Refer to Appendix A
EXPERIMENTAL
THEORETICAL CURVE
CURVE
AV( VOLTS)
0.4 0.5
Hz
THEORETICAL SLOPE = 323 Sali
m
Hz
EXPERIMENTAL SLOPE = 310 mV
m
FIGURE 2 — COMPARISON OF THEORETICAL AND EXPERIMENTAL RESULTS
In order to obtain Aw=f ( ACp) from the above result
several assumptions are necessary. Let w be the fre-
quency of oscillation corresponding to a voltage-variable
Capacitor capacitance Cp, and w+ Aw correspond to the
VVC capacitance Cp - ACp, In the derivation itis neces-
sary that (Aw)2 be small compared to (2 Aw)w. Since w is
52.0 MHz, and for linear operation the maximum Aw is
only about 60 kHz, it can be seen that this is a good as-
sumption. Also, it is assumed that the denominator Cp -
ACp ® Cp this is a good assumption provided the quies-
cent value of V and the smallinput voltages lead to small
variations in capacitance,
The expression giving ACp =f (AV), equation 9 in
Appendix B is:
Cho [av]
AC. =———_ (2)
D yi + @
Again, it is desirable to examine the assumptions in-
herent in deriving the above expression. Referring to
Appendix B for details, one can see that V2@ has been
substituted for the quantity (V + AV)% (V)@ Also, all but
the first two terms of the binomial expansionof (V + AV)@
have been neglected,
Combining equations (1) and (2) we obtain the following
equation:
w Epieteor eno
OS
2 (Kg + Ch)(K, + Co) yi +a
AV
It can be seen from the above equation that the fre-
quency deviation Aw is proportional to the change of input
voltage AV no matter what the value of a is.
The above equation has been evaluated for the circuit
shown in Figure 1. The result of this evaluation is a fre-
quency deviation vs. voltage slope of 323 Hz/mV.
Referring to Figure 2, it can be seen that this slope
(323 Hz/mV) is in good agreement with the emperically
derived slope of 310 Hz/mV. The assumptions imposed
upon the circuit analysis limited the accuracy of the
derivation, otherwise even better agreement would have
been obtained. In particular, the main reason for the
difference between the two results probably results for
the neglection of the higher terms of the binomial expan-
sion of V2@,
APPENDIX A — HOW EPICAPS WORK
Epicaps are voltage-variable capacitors based on PN
junction theory. Conventionally speaking, when we refer
to a semiconductor diode we normally visualize a 2-
terminal p-n junction operated in the forward conduction
region (as a rectifier) or in the reverse avalanche region
(as azener diode). From this standpoint, the word diode
applied to a Epicap is actually a misnomer — for while
the Epicap is indeed a 2-terminal PN junction, it oper-
ates neither as a rectifier, nor as an avalanche device.
Rather, it operates principally in the region between for-
ward conduction and reverse breakdown — the very region
in which a conventional diode is considered to be cut off.
In this operating region the PN junction can be repre-
sented by a capacitor in series with a resistor,
One rr crea pe se ear
Ss
FIGURE 1
The capacitance, known as junction capacitance, is in-
herently associated with all PN junctions and, while it
represents an undesirable parasitic in conventional diode
operation, it is the specific mechanism that permits the
device to function as an Epicap, or voltage-variable ca-
pacitor, This is true because the capacitance value, as
will be seen later, actually varies as a function of applied
voltage. This factor cannot only be used for electric
tuning but also for harmonic generation and parametric
amplification.
The resistor is the result of bulk and contact resist-
ance of the semiconductor material. In Epicap operation
this resistance is the primary parasitic affecting Epicap
quality. Great pains are taken in Epicap design, there-
fore, to hold this resistance value to an absolute mini-
mum,
The cause and behavior of the junction capacitance can
be determined from basic semiconductor theory, as
follows:
When a junction is formed between n-type and p-type
material, there is a cross-migration of charges across
the junction. Electrons from the n-region cross the
junction to neutralize positive carriers near the junction
in the p-region, and "holes'' from the p-region cross the
junction to neutralize the "excess" electrons near the
junction in the n-region, As a result of this migration,
all free charged particles are swept out of the immediate
vicinity of the junction area, And, in the process, a con-
tact potential or space charge (about 0.5 V for silicon)
appears across the junction, Fig. 2a,
This structure acts very much like a slightly charged
capacitor, with the depletion layer representing the di-
electric and the semiconductor material adjacent to the
depletion layer representing the two conductive plates,
If anexternalvoltage is connected across the p-n junc-
tion so as to reinforce the contact potential (reverse
bias), the depletion layer increases, resulting in a ca-
pacitance decrease, Fig. 2b. If a forward voltage is
applied, the depletion layer decreases, Fig, 2c. How-
ever, if the external forward voltage is made large
enough to overcome the contact potential, forward con-
duction occurs and the capacitance effect is destroyed.
It is obvious, therefore, that the value of the junction
capacitance is a function of the externally appliedvoltage,
so long as the junction itself remains reverse biased.
This relationship is:
6 @7C
Cop a eee OE (4)
G.4.v/el (#4 Vv)’
where:
C = capacitance at voltage V
So = Capacitance at zero bias
V_ = voltage across the diode (reverse bias)
@ = contact potential
Y = power law of the junction, determined by impurity
gradient.
The exponent is a function of the impurity gradient of
the PN junction. It may vary from approximately 1/2,
for step junctions, to about 1/6 for specially graded junc-
tions, For electric tuning the greatest capacity-voltage
variation is desired so the step junction is generally
used,
CONTACT
POTENTIAL N-TYPE
FREE ELECTRONS
eae |
DEPLETION LAYER
CAPACITANCE
DEPLETION LAYER
FIGURE 2 (A) — A REPRESENTATIVE P-N JUNCTION
The battery represents the contact potential which must be overcome
before current can flow. Current carriers act as a capacitor plates
and the depletion layer is the dielectric.
SS
MI DEPLETION
REVERSE LAYER WIDENS
BIAS REDUCING
CAPACITANCE
FIGURE 2 (B) — REVERSE VOLTAGE FORCES
carriers away from junction. This widens the depletion layer
and reduces capacitance.
DEPLETION LAYER
NARROWS
INCREASING
FORWARD
BIAS CAPACITANCE
FIGURE 2(C) — FORWARD VOLTAGE FORCES
carriers closer to junction or across junction again changing capacitance.
All PN junctions have to be protected from the corro-
sive effects of the atmosphere; therefore, packages or
housings are used. Assocated with the package and the
internal connections to the junctions are parasitic react-
ances. Thecomplete equivalent circuit of a packaged PN
junction operated in the reverse voltage region for elec-
tric tuning, is shown in Fig. 3. The voltage-variable
capacitance is Cj; Rg is the series resistance; Rp is the
junction shunt resistance which generally can be ne-
glected; Ls is the lead inductance and Ce is the case
capacitance.
The admittance of an Epicap including all parameters
of Fig. 3 is:
T: 1
y= jwC, a R re jwL ms (5)
Ss Ss 1
1 :
jie eC;
p
where
ee is high enough to be neglected
jwC.
y = jwC, + (6)
Oo C. + jwC.R
Sat ies
Inherent junction Q is defined as:
mS ela 7)
If Q is high compared to 1-wLgCythe Epicap has a ca-
pacitance given by
2
Ceq = C. + — z+ (8)
< foot Ce
Sue]
Equation 8shows how equivalent capacity can be modified
by Lg and Ce.
Usually operation is well below the self-resonant fre-
quency Wo = 1/LgCj so that the total capacity is given
by
Cea Crare. Cs (9)
.
Cp = C, 4 7 (10)
V
@
where:
Y = 0.5 for step junction
@ = 0.5 volts
The total Q is then
1
ee uc Re a
TS
The important device information is given by eqs. (10)
and (11) with eq. (8) being significant at frequencies ap-
proaching self-resonance.
In the next section the parameters of specific Motor-
ola Epicaps will be given and comparisons made to pre-
viously available voltage tunable capacitors.
FIGURE 3 — EQUIVALENT CIRCUIT EPICAP
APPENDIX B
Replacing transistor by h-parameter representation and drawing only RF circuit of Figure 1 we have
Writing node equations for the above circuit we obtain
Q) B, a +C,8) +(E, - E,) (hy) + C8) + [F a ONE E))|
3 lal
1 E
2
(2) (Ey - E,) (Noo + C)S) + hoy 7 + (Ey - Eg) ne ae =10)
1
(3) E, (C,S) + (E, - E,) Ge =O
2
Ey E,LC,s
from Eq3 £, =——*—; @. . i.) -<——_—_
Ee ee iquence ome write ic
oOo (oh 1g)
plugging this in equation 2
E,C,S E,
(EERoHEP) (Heese Ce'S ee heen leer i= = ©
py a Neopior i) AL Geant sae
[oem e} Z
Bit Big By - Ey)
1” h
11
Hy ees, (Bie En) CES
(is SA, S66) cite, Ein, (LS en)
Date 2 ead) 21 2 2
h MESIAL 1m)
il (omme) L
Hoy N28) boos 1
Be (owt CoS = + +—)
opr 1) 2
nay 1+L,C)8 Rp
BOT Pet te
=E. (hoo + C.S+—— - )=0
122" DS yy Ay
Assume h-parameters are constant under operating
conditions and define
Bos Mod i hoy Pay Bye
K eth iy ei ea ee
Were a Ts ae ipa ae -
‘iy te ll 11
cs
E, (K, +C.$+ Ay ihe, (Gh Gn) SO)
Nas Sen sem me a gsc)
ONO
Cs
E, =E, (K, + C,\S +————,) / (4)
Ce rarer ENN esta ean oR
(ome) D 2
going now to equation 1
12
MSGS Ve ROR pe ae [2 if hy | )
Mp
- Ey [hyp + Gps - 2 (1+ hyp] =)
11
let Ke eo ah ee [1 +h |
3 eee? 21 a
3 h
11
a)
h 4
12
Be pe tte (1 +h),)
11
E, K, #C)$+ 6,8) =B, (Cg8+K,) <0 (5)
combining equations 4 & 5
cs
(K, + CS + ) (K, +C.S+C_S)
Lea Daa nclates cae ee
oo
E LCL 5%, | xe)
2 pe >
CpS+K,
thus
cs
Oo
(K, +C.Sis ) (K, +C,S+C S$)
i) SE 141,68 3h cco
C.S+K Dy Greta
Dea ae
CoS Ky :
K, Ky +CpSKy+,, 10,8" =K,C)$+C,c;8
2 2
c,c.s yg C08 wt,
+ 5+ K,Cps+c,"s + 5-8
i4L.¢ § 14LC§
[ommne) oOo
- KC. -K,C.8 - KK, =0
Separating out the odd powers of s we get
2 2
K3C)S [: + L,C,§ | + cs Ky + K, c,s [ + L,C,8 |
2 2 2
+ K,C)S : + L,C,8 | - K,C)8 [ + L,C,§ | - K,C)s [ + L,C¢,8 | =O
or
2 2
Chg + CphK3b,C)8 + CU K3 + C.K, + C,K,L,C,8
2 2
- CK, - CpKyL C$ - CpK, - CpKob C8 =O
Solving for s? we obtain
2 2
S =, [cpt +k y= Ka) CK - cx,
Cy (Kg - Ky - Ky) + C,K,
where ——
is
(OK)
3 ; C Kg + CK,
S =- W, Ch +
By = BS = Bop
Sh
Cans
D” &=K,-K,
a4 C Ky & C)K,
Defining Ke & Ky as Ke=
Ky -K,- Ky
oS
and Ky=
K, - K,- Ky
we have LC Wem Sy 48
fo) D 6
oo
[> + |
s*= “ay!
5 , Ch + Ke
w = a. ae (6)
Ch + K,
w=wWw + Aw
a + (2Aw) (w) + ONO = 0,
Ky + Ch - AC)
Subtracting equation 6 from equation 7 and
neglecting the (Aw)? term
MMC) Glas SiO Cy ge a)
wy z Ky + Ch = AC), c (Ky + Cp)
C.K, 4B) _ AC (Ke - Ky)
(Re Cemarnc) (cme nc) (oh Se
a (Kp)
Aw = to * ay AC, (8)
Now we must determine ACh in terms of AV so let
“Do “Do
Ca Wand OC AC iss
DR > DW - ae
po “po 7 te
es | ad pete
Dy owe Woe Awe |e
Nee =
Applying the binomial expansion to (V + AV)° we get
a a-1 a(a-1) ,a-2
Vie av AV + a
V (AV)” + ---
2!
For small AV we can neglect all but the first two
terms. For AC we now have,
ACH = Cao [oav] (9)
yi+@o
Plugging this expression for AC into the equation for
Aw, we obtain a linear relation between Aw and AV
OEE Maes [eav]
Aw=
Qu (Oe wee
K,+C 7) a w|K,+C
Gincela aaron Oe oreo 2 ae!
K,+Cyp 2w 2 Ke + Cp
wW (Kg - Ky) Choe
Aw= AV (11)
2 (Kg + Cp) (K, + C)) yite
The circuit parameters under the conditions of
operation are
w= 52 MHz Co = 26 pF and C, = 21 pF
For the diode
Cy = Capacitance for a 15 V reverse bias
Ch = 19.4pF V = 15 volts
0.465 +AV > _ increase reverse bias
R
i]
Do = 68.3 pF/
For the transistor
hy = 128 ohms hyo = 0.0322
hoy = 18.0 hoo = 5.44 mmhos
Roya 4
K, = hoo Sree a.0 F Ry = 49.5
11 L
3 0.580 1
K, = 544X10~ --—“—+
128 49.5
-3
Ket iy Os
Pork Serer)
K, =h +
Oe 22 ‘
ial 11
Komen 5 44 Cap ne 453 KOT re ror
‘i 2
128 Roe de SS
1 1-hy
Loe hey Mare [ + hs] R, = 1302
3 h
11
Ky = 7.70X Eee hy) [9]
128
= =
K, = 187X108
h
12
Ky = hoo - a + hy,)
11
3 0.0322 C.K, = 4.08pF - 8
5.44 X 10 (19) o°3
128
K, = 0.96X 1072 e “. Kg = 323 pF
K, = 31.4 pF
Cos : mer |
K,+K € ae
aw -=W, Gaiety, DO 7
CoK, + CK, 2 (Kg + Cp) (K, + Cp) yi-465
a ar aS |
Therefore
C.K
u tou
ea aes US .
52 354 68.3
W SS wee, —_——_—_—_—_—_— ———s
e a q (0.465) 6.4) (a42) “a2 oY
K, - Ky = 14K 10° 8 d
MHz Hz
AW = (0.323 —) AV, or, AW = (323 ) av
= 0.443 pF - U V MV
MOTOROLA Semiconductor Products Inc.
BOX 955 e PHOENIX, ARIZONA 85001 e A SUBSIDIARY OF MOTOROLA INC.
1014 PRINTED IN USA $-66 IMPERIAL LITHO 9300
rs _—*
MODEL FM-1 |
TRANSCEIVER
TECHNICAL
DESCRIPTION
AND
OPERATING
: INSTRUCTIONS iS
D
HAMMARLUNG
is Hammarlund Manufacturing Company, Inc.
f" A Giannini Scientific Co.
73-88 Hammarlund Dr., Mars Hill, N. C.
Export Department: 13 East 40th Street, New York 16, N. Y.
©
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Por yttale > 7152, 400 R 153. 490
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OPERATION AND MAINTENANCE MANUAL
Model FM-1 Transceiver
Manufactured By
Hammarlund Manufacturing Co.
Mars Hill, North Carolina
Paragraph
TABLE OF CONTENTS
SEC TION I - INTRODUCTION
Purpose of Equipment
Functional Description
Battery Installation ....
Physical Description : A Aine
Operational Characteristics acl Effective Ringe
SECTION II - SPECIFICATIONS
General shire
Transistor Complement
Diode Complement
Fuse Complement
Crystal Specifications
SECTION III - INSTALLATION AND ALIGNMENT PROCEDURES
Eide 44 6 6 6 GSS 6 6 oH
Preliminary Procedures
Standard Whip Antenna
Tactical Antenna 29) o-
Mobile Antenna ;
The FM-1 As A Base setione
Alignment Procedures
SECTION IV - OPERATION
General . ane
Operating Controls - - +--+ ++ + ++ s+.
Starting and Stopping peo
Squel Chimca-arem cw: @sueeMnr egret «nom rae
Antenna Socket
Phone Jack
External Battery ae
Push-To-Talk Switch .
SECTION V - PREVENTIVE AND CORRECTIVE MAINTENANCE
General... Be PP et Apo tw ere
ThecryeLOoeretions De Pe Shas Oa ae a ee
Receiver Circuits
Transmitter Circuits .
Modulator Circuits care
ii
Paragraph
5-20
9-22
5-24
5-25
5-26
6-1
Porc pol opt el cree rah bomb Bole Pi
ROBIE ROSIE ers wee ee es ES 4 RON ES
TABLE OF CONTENTS (CONT)
Control Circuits
Test Points -
Corrective Maintenance
Trouble Shooting ome
Parts Replacement and nithicer
SECTION VI - PARTS LIST
General
SECTION VII - INSTALLATION, OPERATION,
MAINTENANCE INSTRUCTIONS - ACCESSORY ITEMS
General
Two- Frequency Gonversion Kit
Description
Installation of Two- Ereceren Switch .
Alignment of Two-Frequency Kit
Operation Limitations of Two-Frequency Kit
Operating Principles for Two-Frequency Kit
Maintenance of Two-Frequency Kit
RP-1 Back-to-Back orcs Repeater .
Description .. . 4d .
Installation of RP-1 Ronee :
Battery Installation in RP-1 Rereuters
Antenna Installation for RP-1 Repeater
Successful Repeater Operation
Theory of Operation for RP-1 enenters
Maintenance of the RP-1 Repeater .
SECTION VIII - SCHEMATIC DIAGRAMS
SECTION V - PREVENTIVE AND CORRECTIVE MAINTENANCE (cont'd)
AND
6-1
pubes eh ey Pah Ey Tah Suk Gah ale Sak oe is
DMONINARAWBWWNNNHP HE EH
(0.2)
i
a
ILLUSTRATIONS
Model FM-1 Handheld Transceiver
Circuit Board Assembly :
Model FM-1 Adjustments and Features
Operating Controls
System Block Diagram
Two- Frequency Conversion Kit
RP-1 Back-to-Back One-Way Repeater .
RP-1 Repeater Functional Block Diagram
Two-Frequency Kit Schematic Diagram
Model FM-1 Transceiver Schematic Diagram .
Model RP-1 One-Way Repeater Schematic Diagram
TABLES
Model FM-1 Transceiver Specifications
Transistor Complement
Diode Complement .
Fuse Complement
Crystal Specifications
Test Points ;
Receiver Voltage Moa surpments :
Transmitter Voltage Measurements
Voltage Chart for RP-1 Repeater
as)
:
a a eRe a Mets.
<
Pon OP Ww WH DW OI bb
aoaoonnrn on b&w Ww
Pes bee ae
OoONoounwnw ci & wr
Naoanounwdnd nv WD WD W
Figure 1-1.
Model FM-1 Handheld Transceiver.
SECTION |
INTRODUCTION
1-1 PURPOSE OF EQUIPMENT
1-2 The Hammarlund Model FM-1 hand-
held transceiver (figure 1-1) is designed
to provide reliable communication from
a portable position to a portable or a
fixed site. The FM-1 has been designed
tobe readily carried in the left hand. The
basic equipment provides voice communi-
cation by using FM modulation. Acces-
sory kits allow the equipment to be con-
verted to two-channel operation and/or
MCW (modulated continuous wave) opera-
tion. The equipment has been designed
to work with other FM-1 or FM-5 equip-
ment. However, the equipment is also
capable of working with other FM equip-
ment provided that (1) both equipments
are on the same frequency, and (2) both
equipments use the same deviation in
both the receive and transmit conditions.
Frequency of operation is 150 - 172 me.
1-3 FUNCTIONAL DESCRIPTION
1-4 The Model FM-1 equipment operates
from eight 1.5 volt D cells which are
carried inside the unit, or from an ex-
ternal supply of 12 volts. All equipments
are transistorized for minimum battery
drain and maximum efficiency.
1-5 BATTERY INSTALLATION
1-6 The transceiver is loaded with eight
1.5 volt D cells. The bottom plate is
removed by undoing the large head bolt
with a coin or screwdriver. The batter-
ies are inserted as shown on the trans-
ceiver labelling. Care must be used to
insert the cells in the proper direction,
making certain that no one cell is turned
around.
1-7 PHYSICAL DESCRIPTION
1-8 OPERATIONAL CHARACTERISTICS
AND EFFECTIVE RANGE
1-9 Normal handheld operation requires
the use of the standard whip antenna.
Other antennas may alsobe operated with
the FM-1 as described in Section III,
paragraph 3-6 through 3-12. =
1-10 The FM-1 is designed especially for
city operation among high levels of im-
pulse interference. The noise -immune
squelch will not normally break on igni-
tion and other forms of electrical inter-
ference. The FM-1, when working into a
base station FM-5, may be expected to
operate effectively across cities up to
distances of 5 kilometers or more pro-
vided the FM-5 antenna is above sur-
rounding buildings. In weak signal areas
it is important that the FM-1 be held
vertical, and not slanted at 45° angles.
1-11 When the FM-1 is connected to the
ground plane antenna, normal communi-
cation may be expected to slightly exceed
line-of-sight distance antenna to antenna.
1-12 Increased operating distance over
the standard whip antenna may be obtained
by use of the high gain tactical antenna.
SECTION II
SPECIFICA TIONS
2-1 GENERAL
2-2 Specifications for the Model FM-1
are provided in Table 2-1.
2-3 TRANSISTOR COMPLEMENT
2-4 The transistor complement for the
equipment is provided in Table 2-2.
2-5 DIODE COMPLEMENT
Table 2-1.
Minimum Carrier Power Output
2-6 The diode complement for the equip-
ment is provided in Table 2-3.
2-7 FUSE COMPLEMENT
2-8 The fuse complement for the equip-
ment is provided in Table 2-4.
2-9 CRYSTAL SPECIFICATIONS
2-10 The crystal specifications for the
equipment are provided in Table 2-5.
Model FM-1 Transceiver Specifications.
(6!
Minimum RF power output over the full frequency range (150 - 172 mc): 1
watt at 12 volts.
Carrier Frequency Stability
ty OzsKe
Total frequency drift for any cause does not exceed +0.0025% of the assigned
center frequency from -30° to +50°C ambient.
Modul. tion
Navew Ran
4 Gi ke modulation deviation - sans band.
Ki?
Spurious and Harmonic Radiation
A aypotiur 2m
Fea modulation pre-emphasized in accordance with EIA standards.
All spurious radiation is at least 40 db below level of carrier.
FM Hum and Noise Level
-
At least 40 db below standard test modulation where full-rated-system devia-
tion is +15 ke (''D" cell supply or external 12-volt battery not charging).
AM Hum and Noise Level
The ratio of the peak ac voltage to the de voltage detected from the carrier
does not exceed -35 db. . 25h GoO-ZS0O BW 2,24¥¥e/s
Modulation ES
2-1
Table 2-1. Model FM-1 Transceiver Specifications. (cont'd)
Modulation Limiting (cont'd)
for an input level 20 db above the level producing 2/3 rated system deviation
at 1000 cps.
Audio Frequency Harmonic Distortion
10% maximum, with standard test modulation (EIA).
Audio Frequency Response
The audio response does not vary more than +2 or -8 db from a true 6 db per
octave pre-emphasis characteristic from 400 to 2500 cps as referred to the
1000 cps level.
Output Impedance
Suitable for whip antenna, or to match an external 50-ohm ground plane type
antenna.
Duty Cycle NéT DESIGNED FoR | WATT OVTPLT ConTIW URES OR AM ATGOR SERUICE ,
6 seconds receive at rated audio power output, 6 seconds transmit at rated
RF power output, and 48 seconds in the standby condition.
Current Drain
Maximum. current drain with 12 volts de at full rated RF power output is 350 ,
milliamperes. P= €T= 4,2” x LEAS Aidly Cyd 2G eae poles
CS ae poz. oF 8
3 CTbWK as ¢ o76
Sensitivity ee O. 544 jae Ay ragi-
Better than 0.7 uv for 20 db quieting.
0.7 microvolts is the maximum amount of signal from an unmodulated stan-
dard input signal source that is required to produce 20 decibels of noise
quieting measured at the receiver audio output.
Squelch Sensitivity
0.35 microvolts is the maximum value of the standard test input signal source
which will open the receiver squelch. The squelch control is adjustable with
screwdriver, and is accessible from the top panel behind a snap-type water-
proof cover.
Modulation Acceptance Bandwidth PES Ke Rawewhend
Minimum modulation acceptance bandwidth is +15 KC (wideband).
Adjacent Channel Selectivity
Adjacent channel selectivity is a minimum of 50 db at +60 KC.
Spurious and Image Response Attenuation
At least 40 db down at all frequencies.
Oscillator Stability + 4 01S KC
Total frequency drift for any cause does not exceed +0. 0025% of the assigned
Table 2-1. Model FM-1 Transceiver Specifications. (cont'd)
Oscillator Stability (cont'd)
center frequency from -30° to +50°C ambient. Oscillator crystals are her-
metically sealed in HC-25/U holders. The local oscillator is adjustable
electrically so that the receiver may be tuned to the exact operating fre-
quency.
Residual Hum and Noise Level
At least 40 db down from rated output with standard test modulation (''D" cell
supply or external 12-volt battery not charging).
Audio Frequency Response
Within +2 and -8 db of a standard 6 db per octave de-emphasis curve over the
range of 400 - 2500 cps.
Audio Power Output
At least 150 milliwatts minimum to speaker. At least 10 milliwatts to ear-
phone jack accessible from top panel behind a snap-type waterproof cover.
Audio Distortion
Less than 10% at 2/3 rated deviation with 1000 cycle tone.
Antenna Input Impedance
To match whip antenna or 50-ohm external antenna.
Duty Cycle
Continuous.
: (2%, 008
Current Drain PoET= 0,096
Maximum current drain with 12 volt de: Receive (no signal), 8 milliamperes;
Receive, 40 milliamperes with full rated audio output. P=,, y o¥o= 0, 48w ¢
Table 2-2. Transistor Complement.
REFERENCE :
DESIGNATION DONG eAD FUNCTION
RECEIVER SECTION
2N3478 -- RF Amplifier
2N3564 lst Mixer
not assigned
2N3564 Oscillator
2N3693 2nd Mixer
not assigned
2N3693 1st IF Amplifier
2N3693 2nd IF Amplifier
2N3693 3rd IF Amplifier
Table 2-2. Transistor Complement. (cont'd)
REFERENCE
DESIGNATION TYPE FUNCTION
RECEIVER SECTION
2N3693 4th IF Amplifier
2N3693 Limiter
2N3693 1st Audio
2N3567 2nd Audio
2N3567 Class B Audio
2N3638 Class B Audio
2N3693 Noise Amplifier
TRANSMITTER SECTION
2N3693 Audio Amplifier
2N3693 Clipper
2N3567 Amplifier/Integrator
2N3693 Oscillator
2N3693 Modulator
2N3693 Tripler
CH2369 Tripler
CH2369 Doubler
2N3564 1st Amplifier
2N3866 2nd Amplifier
40280 Final Amplifier
Table 2-3. Diode Complement.
REFERENCE
DESIGNATION FUNCTION
RECEIVER SECTION
AA119 Discriminator Diode
AA119 Discriminator Diode
IN34A Noise Rectifier
IN34A Noise Rectifier
1N34A Squelch Gate
T4 Bias Regulator
TS4 Bias Regulator
Test Rectifier
2-4
Table 2-3. Diode Complement. (cont'd)
REFERENCE
DESIGNA TION TYPE FUNCTION
TRANSMITTER SECTION
D106 AA119 Diode
CHASSIS SECTION
External Protect
Diode
Table 2-4. Fuse Complement.
REFERENCE
DESIGNATION FUNCTION
1.5 AMP, 8 AG Power Input Circuit
Table 2-5. Crystal Specifications.
RECEIVER CRYSTAL
Description
Metal-plated quartz plate wire or spring mounted in metal holder.
Mode of Operation
Fundamental.
Correlation
Series Resonance.
Holder
a. Equivalent to Military HC-25/U Holder.
b. Holder HC-25/U is anodized or painted black in color.
c. The actual operating frequency, not the crystal frequency, is stamped on
the side of the receiver oscillator crystal.
The frequency stamp on the receiver crystal is preceded by an "'R".
Frequency Range
16.0 to 19.50 megacycles.
Operating Temperature Range
-30° to +60°C
Tolerance on Nominal Frequency
Crystal is finished at a nominal room temperature of +25°C +3°C to +0. 002%
of the specified frequency. The crystal frequency does not drift more than
Table 2-5. Crystal Specifications. (cont'd)
Tolerance on Nominal Frequency (cont'd)
+0. 002% from the frequency at 25°C as the temperature is varied from -10°C
tozro0lC.
Effective Series Resistance
15 ohms maximum (16.0 to 19.50 mc).
Level of Drive
Maximum level of drive 1.0 milliwatts.
Roca F = Fe A o.4ot4 ke 6.769 0. 4o4#? ) = (6.1 AMG
et z
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PISGAl
Static Capacitance
6 put +1 pupt
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Grounded. Mx Pp he abs 2awslen pola. y
Formula - Multiplication Factor
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9 Senies ALA oe A. pos
= Crystal frequency.
x
F = Carrier frequency. Rk |46.76°H2
a
TRANSMITTER CRYSTAL
Description
Metal plated quartz plate wire or spring mounted in metal holder.
Mode of Operation
Crystal designed to operate on the fundamental thickness shear frequency of
the quartz plate.
Correlation aera
Crystal designed to operate into load capacitance of 32 wuf +0.5 pyf.
Holder
Equivalent to Military HC-25/U Holder.
Holder HC-25/U is anodized or painted black in color.
The actual operating frequency, not the crystal frequency, is stamped on
the side of the transmitter oscillator crystal.
The frequency stamped on the transmitter crystal is preceded by a ''T".
Frequency Range
8.0 to 10.0 megacycles.
Operating Temperature Range
-30 to +60°C
2-6
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Table 2-5. Crystal Specifications. (cont'd)
Tolerance on Nominal Frequency
Crystal is finished to +0.0020% of the exact frequency required at a nominal
room temperature of +25°C. Crystal unit uses an AT cut blank and does not
exceed a frequency drift +0.0020% of frequency at 25°C, +3°C from -30°C to
+60°C.
Effective Series Resistance
35 ohms over frequency range.
Level of Drive
One milliwatt over frequency range.
Static Capacitance
4 to 6 upt
Condition of Testing To Xt Tes Fhe |
Holder grounded. MT, Ping at 2h AaQonp
Formula - Multiplication Factor
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Carrier frequency. 7T)46./60Kbs
2-7
SECTION Ill
INSTALLATION AND ALIGNMENT PROCEDURES
3-1 UNPACKING
3-2 The equipment may be shipped in
either export or domestic packing cases.
In either event, no special unpacking
procedures are necessary. When new
equipment is received, select a location
where the cases may be unpacked without
exposure to the elements.
3-3 PRELIMINARY PROCEDURES
3-4 To prepare the equipment for use,
perform the following steps:
1. Inspect equipment for any possible
damage incurred in shipment. Re-
port damage to responsible per-
sonnel immediately.
CAUTION
Do not attempt to place damaged
equipment in operation as it may
further impair the instrument.
2. See Figure 3-1 for the location of
crystals Y101, or their sockets in
the event crystals are not in-
stalled. Crystals for the re-
ceiver section are identified with
the channel frequency and the
letter "R" on top of the crystal
case. DO NOT ATTEMPT TO
USE CRYSTALS WITH OTHER
MARKINGS UNLESS CRYSTAL
FREQUENCY AND MODE OF OP-
ERATION ARE KNOWN. Crystals
for the transmitter section are
identified with the channel fre-
quency and the letter ''T" on the
top of the crystal case. DO NOT
ATTEMPT TO USE CRYSTALS
WITH OTHER MARKINGS, UN-
LESS CRYSTAL FREQUENCY
AND MODE OF OPERATION ARE
KNOWN. Crystals used in the
transmitter section are operated
in their fundamental mode. The
transceiver is normally shipped
with crystals installed and pre-
aligned for these frequencies. In
the event crystals are not installed,
or it is necessary to change fre-
quency of operation, obtain the
desired crystals and insert firmly
in sockets. Refer to Table 2-5
for crystal specifications. i
Remove the end plate and insert
eight 1.5 volt D cells as shown on
transceiver labeling.
. Replace the end plate and connect
the standard whip antenna.
Turn the volume control fully on
(clockwise). A loud hissing noise
should be apparent. If there is no
hiss, lift the squelch control spring
loaded cover and with a screw-
driver, turn the squelch control
until the hiss is audible. Next,
turn the volume control to the
half-on position and set the squelch
control until receiver hiss is only
just quieted. Do not exceed this
point or a large signal will be re-
quired to open the squelch again.
The transceiver is now ready for
operation. A more sensitive
AUDIC fiw VE,
gli2 diidis preamp.
Gis Audio diver
B—T(03 p YPYK
audi pom RL
L124
AF oT ond GHD
C232
C231
C230
C229 Bt XH
C228
L122
C220
L121
L120
C217
RX CRYSTAL Y101
al Ter L105 FREQ ADJUST |
oO :
Recuk AW L103 :
L101
L102 7
pevirreen) DEVIATION —! KF = ow, C185 FREQ
CONTROL R191 ee Grew et ADJ.
JUMPER (NOTE 1) X104
MOUNTING HOLE - FC oe
X106
TX CRYSTAL Y102
NOTE 1.
REMOVE JUMPER FOR FITS IN X105-X109
TWO FREQUENCY OPERATION
Figure 3-1. Circuit Board Assembly.
3-2
G
squelch setting may be obtained by
setting the gain control to the de-
sired listening level before the
squelch control is adjusted.
3-5 The above directions assume that the
transceiver has been adjusted at the
factory, and is on the correct frequency.
If alignment or frequency adjustments are
required these may be carried out ac-
cording to the directions in paragraph
3-15.
3-6 STANDARD WHIP ANTENNA
3-7 The standard whip antenna is nor-
mally used with the FM-1. Only one
antenna length is used regardless of fre-
quency. Consequently, best results are
obtained if transmitter output circuits
are tuned to the antenna. After the trans-
mitter has been aligned into a dummy
load as described in paragraph 3-15, the
standard whip antenna should be con-
nected. A field strength meter should
next be set up at a convenient distance
from the instrument, and capacitors,
C230, C231 and C232 adjusted for max-
imum output as determined by the field
strength meter. Best operation is always
obtained when the FM-1 is held in a ver-
tical plane. This is particularly true
when the signals are weak. Even if the
unit is held only a few degrees off verti-
cal when receiving a weak signal, the
signal may completely fall out and the
squelch close.
3-8 The FM-1 should preferably always
be operated in the clear, away from
buildings, iron structures and trees.
Buildings, tree plantations, and jungle
will seriously absorb both transmitted
and received signals. Wet foliage es-
pecially will considerably reduce the
working range of the FM-1 equipment.
3-9 TACTICAL ANTENNA
3-10 The tactical antenna, when used
with the FM-1, will increase the ground
wave signal at the expense of the sky
wave signal. The tactical antenna should
be used only for ground-to-ground con-
tacts and not for air-to-ground contacts.
As with the standard whip antenna, best
results will be obtained ifthe transmitter
output circuits are tuned into the antenna
with the aid of a field strength meter.
3-11 MOBILE ANTENNA
3-12 The mobile antenna may also be
used with the FM-1. Due to the increased
ground plane area, antenna efficiency will
be increased and consequently, a greater
range will be obtained. As with the stafi-
dard whip antenna, best results will be
obtained if the transmitter output circuits
are tuned with the antenna with the aid of
a field strength meter.
3-13 THE FM-1 ASA BASE STATION
3-14 The FM-1 may also be used as a
base station in conjunction with the
ground plane antenna. The ground plane
antenna should be located as high as
possible. AS VAF communication is
primarily line-of-sight, every effort
should be made to allow the two antennas
to "see" each other. This condition will
allow the best possible communication
between the two stations. As with the
standard whip antenna, best results are
obtained if transmitter output circuits
are tuned to the antenna with the aid of a
field strength meter.
3-15 ALIGNMENT PROCEDURES
3-16 There are several alignment pro-
cedures which may be followed. The
simplest of these is described in para-
graphs 3-17 and 3-19. Test equipment
required for alignment consists of: a 50
microampere meter; a signal generator
covering the range 455 ke, the IF fre-
quencies 16 mc to 20 mc, and the input
frequencies 150 mc to 172 mc; a fre-
quency meter or counter; a wattmeter;
and a deviation monitor.
3-17 RECEIVER ALIGNMENT
3-18 To align the receiver, proceed as
follows (see Figure 3-2):
1. With the 50 wamp meter connected
to pin 5 of test socket (J-103), con-
nect signal generator at 455 kc to
input of FL101 at approximately
100 wv. Peak L111 for maximum
(100 uv provides 20 db). Feed
generator through 0. 0luf and3.3K
ohm resistances in series.
2. With 50 wamp meter connected to
pin 4 of test socket, adjust L112
for zero output.
3. With 50 wamp meter connected to
pin 5 of test socket and signal
generator (through 0. 01 uf capaci-
tance) to base of Q102, feed ina
Signal at crystal frequency plus
455 ke at the lowest possible level
to start an upward swing in the 50
uamp meter (13 uv provides 20 db
of quieting, approximately 15
wamps). Adjust L107, L108, L109
and L110 for maximum. At the
same time, reduce generator out-
put to lowest possible level to pre-
vent overload.
4. With 50 wamp meter at pin 7 of
test socket, peak oscillator coil
L125 for maximum (approximately
25 wamps).
5. Using Counter, adjust L105 to
crystal frequency.
6. With 50 swamp meter connected to
pin 5 of test socket, and signal
generator set at receive frequency
and connected to antenna, feed in
signal at lowest possible level to
start an upward swing in 50 wamp
meter. Adjust L101, L102, L103,
L104 and L106 for maximum, at
the same time reducing signal gen-
erator to lowest possible level
(approximately 0.3 - 0.5 wv pro-
vides 20 db of quieting).
7. Finally, touch up L101 through
L104, L107 through L110 for max-
imum quieting in speaker.
3-19 TRANSMITTER ALIGNMENT
3-20 To align the transmitter, proceed
as follows:
1. Connect positive lead of 50 wamp
meter to chassis, and negative
lead to test socket (J-103).
2. Connect wattmeter and 50 ohm
load to antenna jack (J4).
3. With 50 wamp meter at pin 2 of
test socket wadjust Lil Omi) 7s C207,
and C209 for maximum reading.
Typical readings should be between
10 and 15 wamps.
4. With meter at pin 3 of the test
socket, peak L118, L119 and C215
for a maximum reading. Typical
readings should be between 35 and
40 wamps.
With meter at pin 6 of the test
socket, adjust C217, C220, C228
and C229 back and forth for maxi-
mum reading. Typical readings
should be between 20 and 30uamps.
Tune €230, C231, C232 for maxi-
mum power out.
RX FREQUENCY
ADJUST 1105
TX FREQUENCY
ADJUST C185
DEVIATION
BATTERY CONTROL R191/'
COMPARTMENT
10.
SPEAKER/MICROPHONE
LS1
Repeat steps 3, 4 and 5 for maxi-
mum power out.
Adjust L115 for best recovered
audio in a standard receiver or a
deviation monitor.
Using frequency meter or counter,
adjust C185 for channel frequency
and repeat above steps if neces-
sary.
Set deviation by adjusting deviation
control R191 until correct devia-
tion is shown on the monitor.
SQUELCH
R2
PHONE JACK
J2 ‘
AUDIO GAIN
ANTENNA
J3
PUSH-TO-TALK
SWITCH S1
Figure 3-2. Model FM-1 Adjustments and Features
3-5
SECTION IV
OPERATION
4-1 GENERAL
4-2 This section describes how to op-
erate the Model FM-1 transceiver.
Proper operation of the instrument is
predicated upon it being installed and
aligned in accordance with instructions
in this manual.
4-3 OPERATING CONTROLS
(Figure 4-1)
4-4 STARTING AND STOPPING. The
equipment is in operation when the OF F/
VOLUME control is in the ON position.
Volume is increased by turning the con-
trol in a clockwise direction. The trans-
ceiver is turned OFF when the OFF/
VOLUME control is turned fully counter-
clockwise. A pronounced click will indi-
cate when the OFF position has been
reached. The operator should be careful
to avoid turning the control beyond the
OFF position to prevent damage to the
control.
4-5 SQUELCH. The squelch control,
which is located behind the spring loaded
cover, is preset prior to operation (para-
graph 3-4, step 5) to set the level of
squelch action. To adjust, the cover is
lifted and the control turned until the hiss
in the receiver just disappears. The
squelch control should not be rotated be-
yond this point. The squelch circuit
enables the receiver audio to be switched
off in the absence of signal. The closer
the control is set to the break point, the
smaller the signal required to open it.
The squelch control is normally set with
the volume control at the normal listen-
ing level.
4-6 ANTENNA SOCKET. The standard
whip antenna is connected to the antenna
socket. Alternatively, the tactical an-
tenna, the mobile antenna or the ground
plane antenna are connected to the anten-
na socket.
4-7 PHONE JACK. The phone jack is
located behind the jack cover labelled
PHONE. When the head phone jack is
plugged in the speaker is automatically
disconnected.
4-8 EXTERNAL BATTERY JACK. The
external battery cable is plugged into the
external battery jack which is located
under the jack cover labelled EXT BAT.
The external battery source is used in
fixed or mobile operation. The internal
circuitry includes a diode to prevent
damage to the transceiver if the battery
leads are inadvertently incorrectly polar-
ized.
4-9 PUSH-TO-TALK SWITCH. The
push-to-talk switch is located on the side
of the transceiver, and is normally de-
pressed with the fingers of the left hand.
When the switch is pressed, the trans-
ceiver is placed into the transmit condi-
tion and the panel controls are rendered
inoperative. The operator should speak
across the mouthpiece with the mouth-
piece nearly touching the lips. Speaking
directly into the mouthpiece will cause
blasting in the receiver.
4-2
EXT. BAT. +. ANTENNA.
| Nausea a
SQUELCH PHONES VOLUME
a, ~~.
Figure 4-1. Operating Controls.
;
\
|
/
4
|
|
|
DUMMY
CONNECTOR
SECTION V
PREVENTIVE AND CORRECTIVE MAINTENANCE
5-1 GENERAL
5-2 This section describes the basic
principles of operation for the Model
FM-1, and offers maintenance informa-
tion to assist the technician in trouble-
shooting and repairing certain malfunc-
tions which could occur.
5-3 THEORY OF OPERATION
5-4 The FM-1 transceiver is comprised
of a receiver and a transmitter (see Fig-
ure 5-1). The speaker of the receiver is
used aS a microphone in the transmit
mode of operation.
5-5 RECHIVER® CLR CUI ES. Theire-
ceiver is a double conversion super-
heterodyne in which one oscillator serves
as both the first and the second source of
injection voltages. All transistors in the
receiver are silicon. Sjlicon transistors
are relatively free from breakdown due
to overload from adjacent transmitters,
and are able to be operated under condi-
tions of considerable heat.
5-6 The RF amplifier Q101 is operated
in the common emitter mode; its de path
is in series with the local oscillator,
Q104. The RF input circuit consists of
L101, C101 and C102. The two capaci-
tors form a capacitive divider providing
an impedance match to Q101. Output
from the RF amplifier is fed to bandpass
coupler L101 and L103. Output from
L103 is fed by means of an inductive tap
on L103 to the first mixer Q102; for dc,
Q102 is in series with Q105, the second
mixer.
5-7 Following the first mixer are four
tuned circuits, L107 through L110. Out-
put from L110 is inductively coupled to
the second mixer Q105. These circuits
offer a high degree of selectivity to un-
wanted signals. The first IF frequency
may be determined through the following
relationship:
Fue (We cio) ces
where F, = carrier frequency
Fx, = crystal frequency
5-8 Local oscillator Q104 operates in
the fundamental series mode. The oscil-
lator is a simple feedback type with feed-
back being obtained through a small
winding over the main tuned circuit which
consists of L125 and the associated ca-
pacitor C113. Crystal Y101 is in series
with the feedback loop, representing a
high impedance to all frequencies except
that of the crystal. Inductor L105 "pulls"
the crystal, allowing considerable adjust-
ment of the frequency.
5-9 Capacitor C113 has a twofold pur-
pose; to tune inductor L125 to the crystal
frequency, and to pass on harmonics of
the crystal frequency to the tuned circuit
L106 and C111.
5-10 Basically, the oscillator operates
between 16.6 mc and 19.06 mc. Output
5-1
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5-2
from the oscillator is fed directly to the
second mixer Q105 At the same time
L106 and Cl11 selects the eighth har-
monic of the oscillator. Tuned circuit
L104 and C109 together with L106 and
C111 form a highly selective bandpass
coupler to remove the unwanted harmon-
ics, and the output is fed to the first
mixer, Q102. In aligning the receiver,
care must be exercised to see that only
the eighth harmonic is used. It is a sim-
ple matter to tune the oscillator to the
tenth harmonic and allow an input signal
only 910 ke away from the wanted signal.
5-11 It should be realized that with this
system, the high frequency IF system
L107 through L110 must be retuned each
time the input circuits are tuned to a new
frequency.
5-12 Following the second mixer is a
highly selective ceramic filter, FL101.
This filter requires no alignment, and
remains permanently tuned to the center
frequency of 455 kc.
5-13 Transistors Q107 through Q110 are
resistance-coupled IF amplifiers. Due
to the extremely good selectivity obtained
from filter FL101, further selectivity is
not required. Each of the amplifiers are
series connected for dec. Some limiting
action takes place in the IF amplifier,
especially the latter stages on larger
signals. However, limiting is mainly
effected by Qill. The limiter trans-
former L111 is link coupled to discrimi-
nator transformer L112, and from there
the output is fed to diodes D101 and D102.
A de-emphasis network consisting of
R150 and C157 connects the discriminator
output to the first audio amplifier Q112
through volume control R3.
5-14 Simultaneously, output from the
discriminator is fed to the noise ampli-
fier Q116 through C165 and squelch con-
trol R2. The noise amplifier is designed
to pass only noise, all audio signal being
removed by a combination of negative
feedback and small coupling capacitors.
The output is rectified by D103 and D104
and the resultant de fed by the diode gate
D105 to the first audio transistor, Q112.
5-15 Under the no-signal condition the
rectified noise voltage causes amplifier
Q112 to be saturated and the voltage at
the collector of Q112 to be at or near
zero, causing the next amplifier
stage Q113 to cut off. The presence
of a signal however causes adrop innoise
and a reduction in the dc bias fed through
diode gate D105. The diode gate opens
and direct-coupled amplifier Q112 and
Q113 is allowed to normally operate,
allowing the signal to reach the speaker.
5-16 The class B audio amplifiers Q114
and Q115are series connected for dc (that
is, each transistor has 6 volts across it
from collector to emitter). However,
from an ac point of view the two transis-
tors are in parallel. The upper transis-
tor (Q114) is an NPN and the lower tran-
sistor (Q115) is aPNP. When the incoming
signal is positive going only the NPN
transistor conducts, and when the incom-
ing signal is negative only the PNP tran-
sistor conducts. The two diodes D107 and
D108 are part of the forward bias network
consisting of R170 and R172. The two
diodes allow the bias to be automatically
adjusting under varying voltage and tem-
perature conditions.
5-17 TRANSMITTER CIRCUITS. Q120
is a parallel mode Colpitts oscillator
operating in the fundamental mode. Out-
5-3
put is multiplied eighteen times before
reaching the antenna. Output from the
oscillator is capacitance coupled to mod-
ulator Q121, and then to the first tripler
stage, Q122, andtoa bandpass stage
consisting of L116/C198 and L117, C207,
C208, C209, C210. A further tripler
stage, Q123, is followed by bandpass
coupler L118, C211, L119 and the asso-
ciated capacitors C214 and C215. The
bandpass couplers remove unwanted
harmonics of the crystal oscillator, pass-
ing only the wanted signal. A doubler
stage, @Q124, converts the signal to the
wanted frequency, ready for amplifica-
tion by amplifiers Q125, Q126, and Q127.
A double pi output network removes un-
wanted harmonics from the output signal
and allows a proper match between tran-
sistor Q127 and the antenna.
5-18 All stages following the modulator
operate approximately class C. In the
absence of drive these stages draw no
current.
5-19 MODULATOR CIRCUITS. In the
transmit mode, speaker LS1 serves a
dual function as the microphone. The
components C171 and R175 form a pre-
emphasis network. This is followed by
an audio amplifier Q117 direct coupled to
a clipper, Q118. Following the clipper
is a low pass filter comprised of L114,
C182, R187, and C178, the purpose of
which is to remove the audio harmonics
generated in the clipper. The amplifier-
integrator stage de-emphasizes the sig-
nal. Output from the integrator on sig-
nals which have been clipped are triangle
shaped. These signals are nowfed,
through the deviation control, to modula-
tor Q121. The deviation control sets the
deviation of the modulator. Too great a
deviation will cause sidebands to fall out-
side the receiver pass band at the re-
ceiving end, causing the signal to be very
distorted.
5-20 CONTROL CIRCUITS
5-21 When the push-to-talk switch is de-
pressed, the following functions take
place: (1) the antenna is changed from
the receiver to the transmitter, (2) the
speaker is removed from the receiver
and connected to the input of Q117, allow-
ing its use as a microphone, and (3) the
+12 volts is removed from the receiver
and connected to the transmitter.
5-22 TEST POINTS
5-23 Various test points have been pro-
vided in the Model FM-1, and the outputs
connected to test socket J103. Diode
D106 rectifies a portion of the oscillator
voltage, thus the oscillator is merely
adjusted for maximum dc voltage at the
test socket, pin 7. Diode D109, likewise,
feeds a rectified signal to the test socket,
enabling the various transmitter stages
to be. tuned for maximum output. A list
of test points in the instrument is pro-
vided in Table 5-1.
5-24 CORRECTIVE MAINTENANCE
5-25 TROUBLE SHOOTING. In trouble
shooting the Model FM-1, a step-by-step
method is helpful. Isolate the fault by
working back from the speaker until the
defective stage is found. When trouble
shooting the receiver it is well to re-
member that most of the stages are op-
erated in series for de, in order to keep
the battery current consumption ata
minimum. Consequently, a defect in one
stage may well affect several other
stages. Voltage measurements should
Table 5-1. Test Points
Test
Point Function
Transmitter second tripler
current.
Transmitter doubler current.
Receiver discriminator.
Receiver limiter output.
Transmitter final drive.
Receiver oscillator output.
Battery voltage.
Receiver audio output.
Ground.
Transmitter audio input.
Transmitter control.
only be made with a VTVM (except where
measured at the test socket). The low
resistance of ordinary multimeters may
well upset the voltage measurements,
especially in the higher impedance cir-
cuits. Tables 5-2 and 5-3 provide a list
of typical voltage measurements.
CAUTION
When aligning the transmitter, it is
possible to tune some of the cir-
cuits to the incorrect harmonic.
5-5
For example, the first tripler stage
may also be made to double. An
absorbsion type wavemeter should
be used to check the frequency when
doubt occurs.
5-26 PARTS REPLACEMENT AND
ALIGNMENT. When replacing compo-
nents which are connected to or operate
in conjunction with one or more of the
tuned circuits, a realignment of the re-
paired section should be made. Align-
ment procedures are fully covered in
Section III, paragraph 3-15. Every effort
has been made to use standard compo-
nents wherever possible to make replace-
ment of parts noncritical. Components
are listed by part number and reference
designation in Section VI of this handbook.
5-27 When replacing components, care
should be used not to damage them
through the use of excessive heat. Al-
though silicon transistors are used
throughout, even these can be damaged
if too much heat is applied for too long a
period. Likewise, resistors and capaci-
tors are damaged or change value when
excessive heat is applied. When replac-
ing components on the printed circuit
board, a solder sucker should be used to
withdraw the solder from eyeletted holes.
Table 5-2. Receiver Voltage Measurements.
RF Amp
lst Mixer
Oscillator
2nd Mixer
With Noise
dicts i Q107
2nd IF Q108
3rd_ IF Q109
4th IF Q110
Limiter Q111
With 0.1 uf from Filter
Output to Ground
Q107
Q108
Q109
Q110
Ql111
Unsquelched with Noise
1st Audio Qli2
Audio Driver Q113
Audio Out Q114
Audio Out Q115
Noise Amp Q116
Squelched
Q112
Q113
Q114
Q115
Q116
All measurements are referenced to ground.
Input Voltage: 12 vdc.
Test Equipment: Hewlett-Packard Model No. 410B VTVM.
5-6
Table 5-3. Transmitter Voltage Measurements.
DC VOLTAGE
1. Input Voltage: 12 vdc.
2. Test Equipment: Hewlett Packard Model No. 410B VTVM.
Sail
SECTION VI
PARTS LIST
6-1 GENERAL
6-2 This section of the handbook contains
a list of replaceable parts for the Model
FM-1 transceiver, and the accessory
items described in Section VII. The parts
list is arranged as follows: pages 6-2
through 6-17 cover the FM-1 unit, pages
6-18 through 6-20 cover the RP-1 re-
peater, and the balance of the parts list
catalogs components of the two-frequency
kit and the high gain tactical antenna.
6-1
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY
C101 M1519-01-00084 Capacitor, Dur Mica, J El Menco
15 pf
C102 MI519-01-00096 Capacitor, Dur Mica, 1 El Menco
36 pf
C103 MI509-01-01019 Capacitor, Disc Ceramic, il Rui MiGs
0. 001 uf
C104 MI509-01-01019 Capacitor, Disc Ceramic, 1 iEVey Nike Ge
0.001 pf
C105 MI509-02-04001 Capacitor, Tubular Ceramic, il Erie
il W fort
C106 MI509-01-01042 Capacitor, Disc Ceramic 1 152, IML, GC
0.01 uf
C107 MI509-01-01019 Capacitor, Disc Ceramic il Ie INA. (Ge
0.001 uf
C108 MI509-01-01019 Capacitor, Disc Ceramic il IG IML, Ge
0.001 pf
C109 MI519-01-00059 Capacitor, Dur Mica, 1 El Menco
20 pf
(CULO MI509-02-04001 Capacitor, Tubular Ceramic, 1 Erie
1.0 pf
Git MI519-01-00084 Capacitor, Dur Mica, il El Menco
15 pf
Ci
(Cia M1519-01-00084 Capacitor, Dur Mica, il El Menco
il) yore
C114
C115 MI509-01-01019 Capacitor, Disc Ceramic, 1 IR, Mi, C
0.001 pf
C116 MI509-01-01042 Capacitor, Disc Ceramic, iL R.M.G.
0.01 uf
Cay MI519-01-00023 Capacitor, Dur Mica, il El Menco
iL [ose
C118 MI509-01-01043 Capacitor, Disc Ceramic, if Pe. IME, (Cy
ORI teary,
(Cie M1519-01-00023 Capacitor, Dur Mica i El Menco
ik. © Jour
C120 MI509-01-01042 Capacitor, Disc Ceramic, il Reo Mae
OA0Lopt
C121 MI509-01-01042 Capacitor, Disc Ceramic, 1 1, Mi, CG,
0.01 pf
C122 MI519-01-00084 Capacitor, Dur Mica, i El Menco
15 pf
C123 MI509-01-01042 Capacitor, Disc Ceramic, i IRs Mls (Gg
0.01 uf
C124 MI519-01-00023 Capacitor, Dur Mica, iL El Menco
1.0 pf 5
6-2
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
C125
C126 MI519-01-000238 Capacitor, Dur Mica, 1 El Menco
1 pf
C127
C128
Ci29
C130
C1381 MI509-01-01042 Capacitor, Disc Ceramic, 1 R.M.C
OD, OL pt
C132 MI509-01-01042 Capacitor, Disc Ceramic, 1 R.M.C
0.01 yf
C133 MI509-01-01042 Capacitor, Disc Ceramic, 1 1Bus INL, (C
0.01 pf
C134 MI509-01-01042 Capacitor, Disc Ceramic, il R.M.C
0.01 pf
C135 MI509-01-01043 Capacitor, Disc Ceramic, il R.M.C
Oi i 2S y
C136 MI509-01-01042 Capacitor, Disc Ceramic, il R.M.C
0.01 pf
(Cilay MI509-01-01043 Capacitor, Disc Ceramic, 1 R, Mac;
Oat 2 ony,
C138 MI509-01-01042 Capacitor, Disc Ceramic, 1 RaMaGs
0.01 uf
C139 MI509-01-01043 Capacitor, Disc Ceramic, il Re MiGs
Oe he? Sav:
C140 MI509-01-01042 Capacitor, Disc Ceramic, 1 ReaviaGe
0.01 uf
C141 MI519-01-00049 Capacitor, Dur Mica, 1 El Menco
i) jose
C142 MI519-01-00049 Capacitor, Dur Mica, il El Menco
12 pf
C143 MI509-01-01043 Capacitor, Disc Ceramic, 1 R. Macs
Onl pt 25 Vv
C144 MI509-01-01019 Capacitor, Disc Ceramic, 1 RE MaG
0.001 pf
C145 MI509-01-01042 Capacitor, Disc Ceramic, 1 1365 INAS (Gi,
0.01 uf
C146 MI509-01-010438 Capacitor, Disc Ceramic, 1 R.MAG?
0.1 wi 25 v
C147 MI509-01-01043 Capacitor, Disc Ceramic, il R. MeiC:
0.1 pf 25 v
C148 MI509-01-01042 Capacitor, Disc Ceramic, 1 Ra Vier
0.01 pf
eae a ee ae aS eee eT RS Tae Tee Se
6-3
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
C149 MI509-01-01043 Capacitor, Disc Ceramic, 1 Re Mia Ge
Om pt 25 v
C150 MI509-01-01043 Capacitor, Disc Ceramic, il Re MiG:
1 jut FA)
Coil MI519-01-00097 Capacitor, Dur Mica, 1 El Menco
620 pf
C152 MI519-01-00097 Capacitor, Dur Mica, il El Menco
620 pf
C153 MI509-01-010438 Capacitor, Disc Ceramic, 1 R. M. G,
0.1 uf 25 v
C154 MI519-02-00069 Capacitor, Dur Mica, 1 El Menco
820 pf
Oaliays; MI519-02-00069 Capacitor, Dur Mica, i El Menco
820 pf
C156 MI509-01-01020 Capacitor, Disc Ceramic, 1 R. M. CG.
0.005 uf
Oley MI528-01-03002 Capacitor, Flat Foil, i Amperex
0.047 uf
C158
C159 MI509-01-01043 Capacitor, Disc Ceramic, iL R.M.C
Qe tl iit AB
C160 MI509-01-01043 Capacitor, Disc Ceramic, if: R.M.C
0.1 pf 25 v
C161 MI515-02-04012 Capacitor, Electrolytic, 1 Amperex
4 yufl10v
C162 K1528-01-03004 Capacitor, Flat Foil, if Amperex
0.022 uf
C163 K1515-02-04012 Capacitor, Electrolytic, 1 Amperex
4pfl10v
C164 MI509-01-01019 Capacitor, Disc Ceramic, il de VG:
0.001 pf
C165 M1509-01-01020 Capacitor, Disc Ceramic, 1 R. M. C
0.005 uf
C166 K1515-02-04012 Capacitor, Electrolytic, 1 Amperex
4 uf10v
C167 K1515-02-04012 Capacitor, Electrolytic, ~ 1 Amperex
4 pf 10v
C168 K1515-02-04015 Capacitor, Electrolytic, 1 Amperex
40 wi 16 v
C169 M1509-01-01019 Capacitor, Disc Ceramic, i Tit Wile (ic
0.001 uf
C170 K1515-02-04001 Capacitor, Electrolytic, 1 Amperex
6.4 uf16 v
enlyal K1528-01-03001 Capacitor, Flat Foil, i Amperex
0.033 pf
CLiZ M1509-01-01042 Capacitor, Disc Ceramic, vi iPS, IML, (Cy
0.01 yf
6-4
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
C173 M1509-01-01042 Capacitor, Disc Ceramic, 1 ReVEIGe
0.01 pf
C174 K1515-02-04014 Capacitor, Electrolytic, il Amperex
20 pf 16 v
C175 K1515-02-04016 Capacitor, Electrolytic, 1 Amperex
80 uf 25 v
C176 K1515-02-04001 Capacitor, Electrolytic, dl Amperex
6.4 uf 16 v
CITT K1515-02-04001 Capacitor, Electrolytic, il Amperex
6.4 pf 16 v
Cis M1528-01-03002 Capacitor, Flat Foil, il Amperex
0.047 uf
Cuyg M1528-01-030038 Capacitor, Flat Foil, i Amperex
0.01 pf
C180 K1515-02-04011 Capacitor, Electrolytic, L Amperex
50 pi 6.4 v
C181 K1515-02-04001 Capacitor, Electrolytic, 1 Amperex
6.4 uf16v
C182 M1509-01-01042 Capacitor, Disc Ceramic, il Reina
0.01 pf
C183 =
C184
C185 K1543-01-00001 Capacitor, Variable, il Amperex
1.5- 8.5 pt
C186
C187 M1519-01-00087 Capacitor, Dur Mica, 1 El Menco
56 pf
C188
C189 M1509-01-01042 Capacitor, Disc Ceramic, il Re Wiener
0.01 pf
C90 M1519-01-00043 Capacitor, Dur Mica, il El Menco
100 pf
Cio M1519-02-00074 Capacitor, Dur Mica, J El Menco
25 pf
Cig M1519-01-00050 Capacitor, Dur Mica, 1 El Menco
22 pf
(Cie M1519-01-00086 Capacitor, Dur Mica 1 El Menco
Compl
C194 M1509-01-01042 Capacitor, Disc Ceramic, iL ReNaGe
0.01 pf
C195 M1509-01-01042 Capacitor, Disc Ceramic, 1 R. MEG.
0.01 uf
C196 M1519-01-00043 Capacitor, Dur Mica, 1 El Menco
100 pf
a Ee ee
6-5
SS
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
COT, M1519-02-00034 Capacitor, Dur Mica, il El Menco
150 pf
C198 M1519-01-00042 Capacitor, Dur Mica, il El Menco
47 pf
C199 M1509-01-01042 Capacitor, Disc Ceramic, il IR, IML, Ge
0.01 pf
C200 M1509-01-01042 Capacitor, Disc Ceramic, i IRS IMig Ge
0.01 pf
C201
C202
C203
C204
C205
C206 M1519-01-00011 Capacitor, Dur Mica, 1 El Menco
3 pf
C207 K1543-01-00002 Capacitor, Variable, i Amperex
2-18 pf
C208 M1519-02-00076 Capacitor, Dur Mica, 1 El Menco
27 pf
C209 K1543-01-00002 Capacitor, Variable, il Amperex
2-18 pf
C210 M1519-01-00088 Capacitor, Dur Mica, il El Menco
82 pf
C211 M1519-01-00005 Capacitor, Dur Mica, 1 El Menco
24 pf
C212 M1509-01-01042 Capacitor, Disc Ceramic, i IR IMI Ge
0.01 pf
(CALS M1519-01-00011 Capacitor, Dur Mica, i El Menco
3 pt
C214 M1519-02-00076 Capacitor, Dur Mica, il El Menco
PAL Jovi
C215 K1543-01-00002 Capacitor, Variable, - 1 Amperex
2-18 pf
C216 M1509-01-01042 Capacitor, Disc Ceramic, il It dil (Ge
0.01 pf
C217 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-18 pf
C218 M1519-02-00064 Capacitor, Dur Mica, 1 E1 Menco
5 pf
C219 M1509-01-01042 Capacitor, Disc Ceramic, 1 Hts INiln (Cie
0.01 pf
C220 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-18 pf
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
C221
C222
C223
C224 K1515-02-04016 Capacitor, Electrolytic, 1 Amperex
80 pf 25 v
C225 M1509-01-01019 Capacitor, Disc Ceramic, i| R.M.C.
0.001 pf
C226 M1519-02-00064 Capacitor, Dur Mica, 1 El Menco
5 pf
C227 M1509-01-01042 Capacitor, Disc Ceramic, 1 ReMi Ge
0.01 pf
C228 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-19 pf
C229 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-18 pf
C230 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-18 pf
C23 K1543-01-00002 Capacitor, Variable, 1 Amperex
2-18 pf
C232 K1543-01-00001 Capacitor, Variable, il Amperex
168 2 8 joe
C233 M1509-01-01042 Capacitor, Disc Ceramic, 1 R.MaGs
0.01 pf
C234 M1509-01-01042 Capacitor, Disc Ceramic, 1 IRS IMLS (Ge
0.01 pf
€235
C236 M1509-01-01042 Capacitor, Disc Ceramic, iL RaMa Ge
0.01 uf
C237 M1509-01-01042 Capacitor, Disc Ceramic, 1 Re MaGe
0.01 uf
C238
C239
C240
D101 AA119 Diode 1 Amperex
D102 AA119 Diode it Amperex
D103 1N34A Diode i G.E
D104 1N34A Diode i G.E
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
D105 1N34A Diode 1 G.E.
D106 AAI19 Diode 1 Amperex
D107 TS4 Diode il Diodes, Inc.
D108 TS4 Diode 1 Diodes, Inc.
D109 1N34A Diode 1 G.E.
D110
D111
FL101 K2725-01-00001 Filter, Ceramic TL30D9-57A 1 Clevite
H101 K2610-01-00001 Heat Sink 1 Wakefield
H102 K2610-01-00001 Heat Sink 1 Wakefield
J103 K2129-01-00006 Socket Meter 1
L101 K1806-01-00070 Coil, Antenna il
L102 K1806-01-00071 Coil, R.F. Int. 1
L103 K1806-01-00072 Coil, Mixer Input 1
L104 K1806-01-00072 Coil, Multiplier Output 1
L105 K1806-01-00061 Coil, Crystal Trimmer 1
L106 K1806-01-00074 Coil, Multiplier Output 1
L107 B1805-02-00205 Coil, IF 1
L108 B1805-02-00205 Coil, IF 1
L109 B1805-02-00205 Coil, IF iL
L110 B1811-02-00029 Coil, IF 1
L111 M1813-01-00001 XMFR, 455 KC Limiter 1
L112 M1813-01-00002 Discriminator 455 KC 1
L113 K5627-01-00010 Choke, Audio 0.5 HY 1
6-8
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
L114
L115 K1806-01-00060 Coil, Phase Modulator 1
L116 K1806-01-00059 Coil, Tripler 1
L117 K1806-01-00059 Coil, Tripler 1
L118 K1806-01-00045 Coil, 2nd Tripler 1
Lal, K1806-01-00045 Coil, 2nd Tripler 1
L120 M1806-01-00052 Coil, Doubler il
L121 M1806-01-00053 Coil, Amplifier ih
L122 M1806-01-00053 Coil, Amplifier 1
L123 M1806-01-00052 Coil, Amplifier 1
L124 M1806-01-00054 Coil, Amplifier 1 .
1125 K1824-02-00002 Coil, OSC Output 1
L126 K1804-01-00021 Coil, 15 wh 1
L127 K1804-01-00021 Coil, 15 wh 1
L128 K1804-01-00021 Coil; 15 fn 1
L129 K1804-01-00021 Coil, 15 wh i
L130 K1805-01-00009 Coil, 3.3 uh i
L131 K1805-01-00009 Coil, 3.3 ph if
L132 K1805-01-00009 Coilesys ih 1
L133 K1805-01-00009 Conti, 35 8 ln 1
1134 K1806-01-00055 Coil, RFC il
P101 K2132-01-00009 Plug PC Board Output 1
Q101 2N3478 Transistor, Silicon 1 RCA
Q102 2N3564 Transistor, Silicon 1 Fairchild
6-9
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
Q103
Q104 2N3564 Transistor, Silicon il Fairchild
Q105 2N3693 Transistor, Silicon 1 Fairchild
Q106
Q107 2N3693 Transistor, Silicon 1 Fairchild
Q108 2N3693 Transistor, Silicon 1 Fairchild
Q109 2N3693 Transistor, Silicon 1 Fairchild
Q110 2N3693 Transistor, Silicon 1 Fairchild
@iital: 2N3693 Transistor, Silicon il Fairchild
Q112 2N3693 Tranisistor, Silicon 1 Fairchild
Q113 2N3567 Transistor, Silicon 1 Fairchild
Ql14 2N3567 Transistor, Silicon 1 Fairchild
@15 2N3638 Transistor, Silicon 1 Fairchild
Q116 2N3693 Transistor, Silicon il Fairchild
Q117 2N3693 Transistor, Silicon il Fairchild
Q118 2N3693 Transistor, Silicon 1 Fairchild
Quy) 2N3567 Transistor, Silicon il Fairchild
Q120 2N3693 Transistor, Silicon il Fairchild
Q121 2N3693 Transistor, Silicon i Fairchild
Q122 2N3693 Transistor, Silicon 1 Fairchild
Q123 CH2369 Transistor, Silicon il Continental
Devices
Q124 CH2369 Transistor, Silicon 1 Continental
Devices
Q125 2N3564 Transistor, Silicon 1 Fairchild
Q126 2N3866 Transistor, Silicon 1 RCA
6-10
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
Q127 40280 Transistor, Silicon 1 RCA
All Resistors Are Fixed Composition 1/4W. +10% Unless Otherwise Specified
R101 4K702-01-00047 Resistor, 18K i Moulded Ntl.
R102 K4702-01-00044 Resistor, 10K 1 Moulded Ntl.
R103 K4702-01-00028 Resistor, 470 Ohm i Moulded Ntl.
R104 K4702-01-00028 Resistor, 470 Ohm 1 Moulded Ntl.
R105 K4702-01-00052 Resistor, 47K il Moulded Ntl.
R106 K4702-01-00049 Resistor, 27K 1 Moulded Ntl.
R107 K4702-01-00038 Resistor, 470 Ohm BD Moulded Ntl.
R108 K4702-01-00036 Resistor, 2.2K il Moulded Ntl.
R109 .
R110 K4702-01-00048 Resistor, 22K dl Moulded Ntl.
jee eilal K4702-01-00056 Resistor, 100K a Moulded Ntl.
R112 K4702-01-00052 Resistor, 47K i Moulded Ntl.
R113 K4702-01-00024 Resistor, 220 Ohm if Moulded Ntl.
R114 K4702-01-00038 Resistor, 3.3K il Moulded Ntl.
R115 K4702-01-00050 Resistor, 33K if Moulded Ntl.
R116
R117 K4702-01-00037 Resistor, 2.7K Ak Moulded Ntl.
R118 K4702-01-00051 Resistor, 39K 1 Moulded Ntl.
R119 K4702-01-00049 Resistor, 27K 1 Moulded Ntl.
R120 K4702-01-00032 Resistor, 1K il Moulded Ntl.
R121
R122
R123
6-11
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER
ASSY
MANUFACTURER
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
R124
R125
R126
R127
R128
R129
R130
R131
R132
R133
R134
R135
R136
R137
R138
R139
R140
R141
R142
R143
R144
R145
R146
R147
K4702-01-00032
K4702-01-00032
K4702-01-00032
K4702-01-00056
K4702-01-00038
K4702-01-00056
K4702-01-00038
K4702-01-00056
K4702-01-00038
K4702-01-00056
K4702-01-00038
K4702-01-00032
K4702-01-00056
K4702-01-00044
K4702-01-00032
K4702-01-00028
K4702-01-00032
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor, 470 Ohm
Resistor,
1K
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
CIRCUIT
REFERENCE
PART NO.
DESCRIPTION
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
R148
R149
R150
R151
R152
R153
R154
R155
R156
R157
R158
R159
R160
R161
R162
R163
R164
R165
R166
R167
R168
R169
R170
R171
K4702-01-00046
K4702-01-00046
K4702-01-00037
K4702-01-00058
K4702-01-00056
K4702-01-00050
K4702-01-00032
K4702-01-00041
K4702-01-00032
K4702-01-00056
K4702-01-00046
K4702-01-00020
K4702-01-00036
Resistor, 15K
Resistor, 15K
Resistor, 2.7K
Resistor, 150K
Resistor, 100K
Resistor, 33K
Resistor, 1K
Resistor, 5.6K
Resistor, 1K
Resistor, 100K
Resistor, 15K
Resistor, 100 Ohm
Resistor, 2.2K
MANUFACTURER
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
-
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
CIRCUIT
REFERENCE
PART NO.
DESCRIPTION
MANUFACTURER
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
R172
R173
R174
R175
R176
Raid
R178
R179
R180
R181
R182
R183
R184
R185
R186
R187
R188
R189
R190
R191
R192
R198
R194
R195
6-14
K4702-01-00036
K4702-01-00041
K4702-01-00032
K4702-01-00042
K4702-01-00035
K4702-01-00044
K4702-01-00038
K4702-01-00039
K4702-01-00032
K4702-01-00039
K4702-01-00052
K4702-01-00041
K4702-01-00020
K4734-01-00010
K4702-01-00056
K4702-01-00036
K4702-01-00056
K4702-01-00041
Resistor, 2.2K
Resistor, 5.6K
Resistor, 1K
Resistor, 6.8K
Resistor, 1.8K
Resistor, 10K
Resistor, 3.3K
Resistor, 3.9K
Resistor, 1K
Resistor, 3.9K
Resistor, 47K
Resistor, 5.6K
Resistor, 100 Ohm
Resistor, Variable 2K
Resistor, 100K
Resistor, 2.2K
Resistor, 100K
Resistor, 5.6K
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Amperex
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
R196 K4702-01-00030 Resistor, 680 Ohm il Moulded Ntl.
R197 K4702-01-00036 Resistor, 2.2K 1 Moulded Ntl.
R198 K4702-01-00016 Resistor, 47 Ohm 1 Moulded Ntl.
R199 K4702-01-00036 Resistor, 22K i Moulded Ntl.
R200 K4702-01-00026 Resistor, 330 Ohm 1 Moulded Ntl.
R201 K4702-01-00024 Resistor, 220 Ohm 1 Moulded Ntl.
R202 K4702-01-00056 Resistor, 100K i! Moulded Ntl.
R203 K4702-01-00008 Resistor, 10 Ohm il Moulded Ntl.
R204
R205
R206 K4702-01-00020 Resistor, 100 Ohm 1 Moulded Ntl.
R207 K4702-01-00008 Resistor, 10 Ohm il Moulded Ntl.
s
R208 K4702-01-00056 Resistor, 100K 1 Moulded Ntl.
R209 K4702-01-00028 Resistor, 470 Ohm 1 Moulded Ntl.
X101 K2116-01-00002 Socket, Crystal 1
X102 K2116-01-00002 Socket, Crystal 1
X103 K2116-01-00002 ‘Socket, Crystal 1
X104 K2116-01-00002 Socket, Crystal 1
X105 K2116-01-00002 Socket, Crystal il
X106 K2116-01-00002 Socket, Crystal ul
Y101 K2305-01-00089 Crystal, Receiver 1
Y102 K2304-01-00024 Crystal, Transmitter 1
PL9016-02-00008 Printed Circuit Board 1
Assembly
1730-01-00003 Printed Circuit Board il
6-15
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
M2873-50-00501 Screw, Nylon 12
No. 6-32 x 1/4 LG
M2898-63-31005 Lockwasher, Int Tooth 1
K1435-02-00052 Shield, RF 1
Alignment Tool 1
K2884-63-00009 Standoff, (for alignment il
tool)
K5136-01-00006 Clip, (for alignement tool) 1
K2806-51-04216 Screw, BD HD iI
No. 4-40 x 1/2 LG
M2893-51-04204 Nut, No. 4-40 3}
M2898-63-41002 Lockwasher 2
M2884-63-00003 Standoff Ge
M2806-51-04228 Screw, DB HD w
No. 4-40 x 7/8 LG
K3135-01-00200 Tubing, 14-inches iL
K6003-01-00004 Wire, Bare 1
No. 20 AWG, 12-inches
TRAY ASSEMBLY
D1 K482 4-01-00001 Diode, 1N91 1 G.E.
J1 K212 1-01-00001 Socket, Male (Ext. Bat) il Switchcraft
J2 K2109-01-00013 Jack, Phone (Min. ) 1 Switchcraft
J3 K2111-01-00004 Socket, Coaxial il Dage
LS1 K1310-01-00014 Speaker, 32 Ohms 1 Oaktron
R1 K4735-01-00621 Resistor, Variable, 10K o 1
R2 K4735-01-00620 Resistor, Variable, 10K 1
R3 K4702-01-00024 Resistor, 1/4W + 10%, 1 Moulded Ntl.
220 Ohms
R4 K4702-01-00041 Resistor, 1/4W + 10%, 1 Moulded Ntl.
5.6K
$1 K5125-01-00001 Switch, 4PDT 1 Moulded Ntl.
PL9016-02-00012
Tray Assembly
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
TRAY ASSEMBLY (Cont'd)
PL9016-03-00018 Control Plate Assembly 1
PL9016-03-00017 Fuse Block Assembly il
PL9016-03-00019 Chassis Assembly i
K2137-01-00005 Cap & Chain it Amphenol
K2806-51-04114 Screw, BD. HD. 2
No. 4-40 x 7/16 LG
M2893-51-04101 Hex Nut, No. 4-40 7
M2898-63-36002 Lockwasher No. 4 2
Int. Tooth
M2888-26-12023 Terminal Lug il
M2892-67-12101 Rivet, 3/8 LG iL
K3135-01-05200 Sleeving, No.8, 1
1-1/8 LG
K2430-02-00111 Knob, Volume Control 1
K2827-67-04104 Set Screw, No. 4-40 1
ed
K2137-02-00009 Dummy Connector 1
K2806-51-08116 Screw, BD. HD. 1
No. 8-32 x 1/2 LG
M2893-51-25201 Nut, Hex, 1/4 x 32 x 1/16 2
THK.
M2893-51-17202 Nut, Hex, 3/8 x 32 x 1/16 1
THK.
M2898-63-36005 Lockwasher, Int. Tooth 2
K2537-02-00043 Spring, Speaker Mtg. 1
K1450-02-00220 Bracket, Switch Mtg. 1
K2806-51-04104 Screw, BD. HD. il
No. 4-40 x 1/8 LG
K3123-01-00041 Ring, Speaker Protect 1
K2418-02-00053 Label, Battery Polarity 1
B2418-02-00052 Label, Tuning Inst. (English) 1
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
REPEATER PRINTED CIRCUIT BOARD ASSEMBLY
C501 M1509-01-01019 Capacitor, Disc Ceramic 1 IRS Ils (Ce
0.001 uf
C502 M1528-01-03002 Capacitor, Flat Foil, i Amperex
0.047 uf
C503 M1509-01-01042 Capacitor, Disc Ceramic, al IRs IMI, (Ge
0.01 uf
C504 M1509-01-01042 Capacitor, Disc Ceramic, 1 Its IM (ic
0201 pie 25.v
C505 M1509-01-01042 Capacitor, Disc Ceramic, 1 1s INibs (Ge
0.01 uf 25 v
C506 M1509-01-01043 Capacitor, Disc Ceramic, 1 IR IMIS (Cie
Ok, al punt Sy
C507 M1509-01-01043 Capacitor, Disc Ceramic, 1 IBYs Ils Ge
O. a pp Bw
C508 M1509-01-01043 Capacitor, Disc Ceramic, 1 Its IMIS Go
(5 al ene 45) 4y
C509 B1515-02-04012 Capacitor, Electrolytic, 1 Amperex
4A wt
C510 B1515-02-04012 Capacitor, Electrolytic, il Amperex
4 pt
C511 B1515-02-04012 Capacitor, Electrolytic, 1 Amperex
4 ut
Con? B1515-02-04012 Capacitor, Electrolytic, if Amperex
4 uf
C513 B1515-02-04017 Capacitor, Electrolytic, 1 Amperex
250 pf
C5i5 M1509-01-01042 Capacitor, Disc Ceramic, il IRG Ml, Ge
0.01 pf
D501 M4805-02-00102 Diode, TS4 il Diodes, Inc.
D502 M4805-02-00102 Diode, TS4 1 Diodes, Inc.
D503 M4805-02-00102 Diode, TS4 1 Diodes, Inc.
D504 M4805-02-00102 Diode, TS4 iL Diodes, Inc.
J501 K2124-01-00001 Socket, Relay i P & Brumfield
L501 1802-02-00051 RF Choke, 2.5 wh 1 P & Brumfield
Q501 K4857-01-00002 Transistor, 2N3693 1 Fairchild
Q502 K4857-01-00002 Transistor, 2N3693 it Fairchild
Q503 K4857-01-00002 Transistor, 2N3693 i Fairchild
Q504 K4849-01-00001 Transistor, 2N3638 al Fairchild
CIRCUIT QTY
REFERENCE PART NO. DESCRIPTION PER MANUFACTURER
ASSY
REPEATER PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
Q505 4840-01-00001 Unijunction Transistor, a G.E.
2N1671
Q506 4816-01-00001 Silicon Controlled Rect. a G.E.
C6U
Q507 K4857-01-00002 Transistor, 2N3693 1 Fairchild
Q508 K4859-01-00001 Transistor, 2N3567 ft Fairchild
Resistors Are 1/4 Watt + 10% Unless Otherwise Specified.
R501 K4734-01-00012 Resistor, Variable, i Amperex
10K Gain
R502 K4702-01-00037 Resistor, 2.7K if Moulded Ntl.
R503 K4734-01-00012 Resistor, Variable, 1 Amperex
LOK Rip
R504 K4702-01-00040 Resistor, 4.7K 1 Moulded Ntl.
R505 K4702-01-00050 Resistor, 33K 1 Moulded Ntl.
R506 K4702-01-00028 Resistor, 470 Ohms 1 Moulded Ntl.
R507 K4702-01-00041 Resistor, 5.6K 1 Moulded Ntl.
=
R508 K4702-01-00050 Resistor, 33K 1 Moulded Ntl.
R509 K4702-01-00046 Resistor, 15K il Moulded Ntl.
R510 K4702-02-00160 Resistor, + 5% 3.6K 1 Moulded Ntl.
R511 K4702-01-00042 Resistor, 6.8K Al Moulded Ntl.
R512 K4702-01-00036 Resistor, 2.2K ik Moulded Ntl.
R513 K4702-01-00044 Resistor, 10K 1 Moulded Ntl.
R514 K4702-01-00047 Resistor, 18K 1 Moulded Ntl.
R515 K4702-02-00192 Resistor, + 5% 75K 1 Moulded Ntl.
R516 K4702-01-00062 Resistor, 330K 1 Moulded Ntl.
R517 K4702-01-00033 Resistor, 1.2K 1 Moulded nae
R518 K4702-01-00032 Resistor, 1K af Moulded Ntl.
R519 K4702-01-00036 Resistor, 2.2K 1 Moulded Ntl.
6-19
CIRCUIT
REFERENCE
PART NO.
DESCRIPTION
REPEATER PRINTED CIRCUIT BOARD ASSEMBLY (Cont'd)
eR ————————————
R520
R521
R522
R523
R524
R525
R526
R527
R528
R529
R531
K4702-01-00034
K4702-01-00046
K4702-01-00036
K4734-01-00011
K4702-01-00058
K4702-01-00023
K4702-01-00023
K4702-01-00024
K4702-01-00032
K4702-01-00032
K4702-01-00032
1450-01-00238
1730-01-00004
9016-02-00017
9016-02-00018
1509-01-01042
1509-01-01042
1543-01-00001
4802-01-00001
4802-01-00001
4802-01-00001
4802-01-00001
1806-01-00061
4702-01-00044
4702-01-00044
4702-01-00044
4702-01-00044
5101-01-00012
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
Resistor,
1.5K
15K
2.2K
Variable, 200K
150K
180 Ohms
180 Ohms
220 Ohms
1K Ohms
1K Ohms
1K Ohms
Bracket, Relay
Printed Circuit Board
TWO FREQUENCY KITS
P. C. Board Assem,. Rec.
P.C. Board Assem. Trans.
Capacitor .0I1MFD Disc.
Capacitor .01MFD Disc.
Capacitor Variable 2-18PF
Diode IN456
Diode IN456
Diode IN456
Diode IN456
Coil Freq. Adjust J
Resistor 10K
Resistor 10K
Resistor 10K
Resistor 10K
Switch SPST
= =| = =] SoS Se SS SS Se Se eS eS Se Ee
MANUFACTURER
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Amperex
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
RM. 'G.
Re Mac,
Amperex
Sylvania
Sylvania
Sylvania
Sylvania
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
Moulded Ntl.
ALCO
6-20
SECTION VII
INSTALLATION, OPERATION, AND
MAINTENANCE INSTRUCTIONS -
ACCESSORY ITEMS
7-1 GENERAL
7-2 This section of the handbook pro-
vides instructions for installing, op-
erating, and maintaining three accessory
items used with the FM-1 transceiver.
These are: the two-frequency conversion
kit, the RP-1 back-to-back one-way
repeater, and the high gain tactical an-
tenna. The two-frequency conversion kit
permits the instrument to operate on two
separate frequencies. The RP-1 repeater
is designed to increase the normal com-
munication distance of the FM-1. The
high gain tactical antenna increases the
low-angle transmitted energy of the unit.
7-3 Paragraphs 7-4 through 7-13 de-
scribe installation, operation, and main-
tenance of the two-frequency conversion
kit. The RP-1 repeater is covered in
paragraphs 7-14 through 7-25, and the
description of the tactical antenna starts
at paragraph 7-26.
7-4 TWO-FREQUENCY CONVERSION
KIT
7-5 DESCRIPTION. The two-frequency
conversion kit (Figure 7-1) consists
primarily of twodiode switching networks
actuated from a front panel switch. The
networks are built upon two small printed
circuit boards (PC601 and PC602) which
are plugged into receiver and transmitter
crystal sockets X101, X102, X104 and
X105. An extra pin at each socket allows
a third connection to each board (Sockets
X103 and X106) (see Figure 3-1). In the
case of the receiver plug-in module, to
fit the module to the transceiver printed
circuit board it is only necessary to re-
move the crystal and plug the PC601
module into the FM-1 printed circuit
board. The pin spacing is so arranged
that the module faces inward. The
module is fitted with two crystals. In-
ductor L20 on the module is used to
"pull" the frequency of crystal Y101B, and
inductor L105, on the FM-1 printed cir-
cuit board, is retained in circuit andused
to "pull'' the second crystal, Y1O1A. To
install the transmitter two-frequency
conversion module it is necessary to cut
or remove the jumper wire connected
between X105 and X106 adjacent to the
transmitter crystal sockets on the FM-1
printed circuit board. The jumper is of
plain wire on the top side of the board
(see Figure 3-1). The two-frequency
module is plugged-in inplace of the crys-
tal. A third pin, X106, indexes the mod-
ule so that the components face inward.
7-6 Capacitor C31 on the module is
used to "pull" crystal Y101B,and capacitor
C185 on the FM-1 printed circuit board
is used to "pull" the second crystal.
7-7 INSTALLATION OF TWO-FRE-
QUENCY SWITCH. After the two modules
are in place it is necessary to drill an
0.25-inch hole in the FM-1 front panel.
A template is provided as part of the kit
in order that the hole may be properly
located. The template is placed over the
CAL
RECEIVE
Figure 7-1
SEE S$
panel and a centering hole made with a
center punch. The panel is then drilled.
The red wire from switch S30 is con-
nected to the +12 volts on the transceiver
side of the ON/OFF switch which is on
volume control Rl. The FM-1 is now
ready for alignment and operation.
7-8 ALIGNMENT OF TWO-FREQUENCY
KIT. Alignment of the two-frequency kit
is carried out as described in Section II,
paragraph 3-15. The frequency switch is
placedin one position and the appropriate
crystals are aligned to frequency. The
switch is then placed at the other fre-
quency and the other set of crystals
aligned to frequency.
7-9 OPERATION LIMITATIONS OF
TWO-FREQUENCY KIT. Because of the
high degree of selectivity obtained in the
7-2
TRANSMIT
. Two-Frequency Conversion Kit.
{ FOR SCHEMATIC DIAGRAM
FM-1 receiver and transmitter circuits,
it is necessary to choose frequencies as
close as possible to each other. The
closer the frequencies the better will be
the sensitivity of the receivers and the
higher the transmitter output powers. A
frequency separation of 600 kc must be
considered maximum. Sensitivity and
power output may be equalized by adjust-
ing the receiver and transmitter tuned
circuits to a position midway between
each frequency. This is especially so
when the separation is greater.
7-10 OPERATING PRINCIPLES FOR
TWO-FREQUENCY KIT. The schematic
diagram for the two-frequency circuit is
illustrated in Figure|8-1. When frequency
selector switch S30 is inthe right-hand
position, a positive voltage is applied to
the anode of D20. Because the cathode
of the diode is connected to ground through
L105 when the module is installed, the
diode is able to conduct and is therefore
in the ON position. Thus, crystal YIO1A
is connected from the base of Q104,
through the link winding on L125 to diode
D601 and through L105 to ground. This
is a normal oscillating position.
7-11 Meanwhile, diode D21, because it
is without positive voltage is not conduct-
ing and is OFF, and crystal Y10IBis un-
able to operate. When the switch is
thrown to the left-hand position the oppo-
site condition occurs. D21 is ON and
D20 is OFF. Y101Ais not operating and
Y10 IBis oscillating.
7-12 When the switch is in the right-
hand position, positive voltage is applied
to diode D32 in the transmitter section
causing it to conduct. It is now in the ON
position. In effect, crystal Y102Bis con-
nected from the base of Q120 through
diode D32 to ground. This is a normal
oscillating condition. Meanwhile because
D31 is without positive voltage it re-
mains OFF and Y102A is inactive. When
the switch is placed in the left-hand posi-
tion, the opposite condition occurs; D31
is ON and D32 is OFF, Y102B is not op-
erating and Y102Ais oscillating.
7-13 MAINTENANCE OF TWO-FRE-
QUENCY KIT. Maintenance of the two-
frequency kit consists of a VTVM check
to assure proper functioning. This is ac-
complished by the following measure-
ments: when a diode is ON a forward
biased voltage across the diode will nor-
mally be approximately 0.6 volts; when
the diode is in the OFF condition no volt-
age will be across the diode.
7-14 RP-1 BACK-TO-BACK ONE-WAY
REPEATER
7-15 DESCRIPTION. The RP-1 repeater
(Figure 7-2) is designed to increase the
normal operating communication distance
of the FM-1, FM-5and similar FM equip-
The system is built around two
FM-1 transceivers, one of which is used
to receive a signal from point A and re-
transmit the signal through a second
FM-1 to point B. When point A has com-
pleted transmission, point B may reply,
the signal being repeated in the same
manner. (See Figure 7-3). In operation,
No. 1 FM-1 receives the signal from
point A at one frequency (example 150
mc). The signal is then fed via the re-
peater to No.2 FM-1 and retransmitted
at a different frequency (example 170 mc)
to point B. When point B replies the sig-
nal is received by No. 1 FM-1 and re-
transmitted by No. 2 FM-1 to point A. In
this example: The receiver at point A
would be tuned to 170 mc. The receiver
at point B would be tuned to 170 me. The
transmitter at point A would be tuned to
150 me. The transmitter at point Bwould
be tuned to 150 mc. No. 1 FM-1 would
receive only. No. 2 FM-1 would transmit
only.
ment.
7-16 From the moment a Signal is re-
ceived by the No. 1 FM-1, a timer is
actuated in the repeater which causes No.
2 FM-1 to switch off after a period of 3
minutes has elapsed. This circuit pre-
vents a transmitter that has been acci-
dentally left on or an interferring carrier
from holding the repeater in the transmit
condition. However, when a carrier is
removed before the 3 minutes has
elapsed, the repeater immediately goes
back to the receive condition and the
timer resets to zero.
ToSu SZGu Gos® 9060 20S®
NIVD 'IOMLNOO NOLLONNAL
OIdnN V AWLL -INO
80gd
RP-1 Back-to-Back One-Way Repeater.
-2.
Figure 7
: OW 0LT NO SHAISOGU V
AUALLVA OW 0ST NO SLINSNVUL @
Acts V OL ONILLINSNVUL 4
YUAAIAOSNVUL YUAATAOSNV UL
a y Vv
OW 0ST 'TYNDIS : OW 0LT 'TVYNOIS
Ga LLINSNVUL GaLLINSNV UL
—
Se
AUALLV EA L OW 0LT NO SAAIAOAU A
AGI+ OW 0ST NO SLINSNVUL V
d OL ONILLINSNVUL V
YUAAIZOSNVUL YALVAdaAY a UAAIDOSNVUL
a eS I-du ee T°ON Vv
eee |
OW OLT TVNOIS OW OST TIVNDIS
GaALLINSNVUL GaALLINSNVUL
1 Repeater Functional Block Diagram.
Si al ew
Figure 7
7-17 INSTALLATION OF RP-1 RE-
PEATER. To operate the two FM-1
transceivers in conjunction with the re-
peater it is necessary to make modifica-
tions to both FM-1 units. A special kit
is supplied with the repeater kit to make
this conversion. When unpacking the
RP-1 repeater equipment, check that the
equipment is undamaged and complete.
The kit consists of the following:
1. The RP-1 repeater together with
the attached three-foot lengths of
cables complete with plugs.
2. No. 2 FM-1 adaptor.
3. Cover plate and screws (two sets).
4. For each ten repeaters, one con-
version kit consisting of template
and punch.
7-18 The two FM-1 units are modified
as follows:
1. Remove cases from both FM-1
units.
2. Place thetemplate over the mouth-
piece and drill a 3/8-inch diameter
hole at the point indicated on the
template. The hole will be below
the mouthpiece and immediately
over the test socket of the printed
circuit board.
3. Using the punch supplied with the
conversion kit, punch out a hole
using the 3/8-inch hole as a guide.
4. Place the template back over the
mouthpiece and drill two 1/16-
inch diameter holes at the points
indicated. These holes are used
1-6
to hold the cover when the FM-1
is not being used as a repeater.
Two thread-cutting screws are
provided with the kit for this pur-
pose.
5. Let one FM-1 transceiver be No. 2
FM-1 (transmitter). At the top
end of the No. 2 FM-1 remove
P101 from socket J4. P101 is the
plug at the end of the printed cir-
cuit board cable which plugs into
the socket on the chassis proper.
6. Insert the adaptor plug provided in
the conversion kit in series with
plug P101 and socket J4. This
adaptor disconnects the antenna
from the push-to-talk switch and
connects it permanently to the
transmitter output. At the same
time, the +12 volt supply is dis-
connected from the receiver. The
transmitter +12 volt line is then
connected to the test socket. The
FM-1 units are now ready for con-
nection to the repeater.
7-19 BATTERY INSTALLATION IN RP-1
REPEATER. Only one battery is nec-
essary to operate the FM-1, the No. 2
FM-1, and the repeater. The battery is
connected to the No. 1 FM-1. Either the
internal or an external battery may be
used. However, the external battery is
preferable in view of the extra drain of
the repeater unit. Connect batteries to
No. 1 FM-1. Connect the repeater cables
to the test sockets through the punched
holes in the cases of the two FM-1 units.
The cable marked "Input From Receiver"
connects to the No. 1 FM-1 and the cable
marked ''Output To Transmitter'' connects
to the No. 2 FM-2. It is important that
the correct cable terminations be ob-
served. At the plug end of the cable
marked "Input From Receiver" will be
founda small single connection plug P502.
This plug must be connected into the
small pin jack (J105) on the printed cir-
cuit board also accessible through the
punched hole in the case of No. 1 FM-1.
No. 1 FM-1 is operated in the receive
mode only. The transmitter portion of
this unit is unused. The receiver portion
should be as far removed in frequency as
possible from the transmitter of No. 2
FM-1. The receiver portion of No. 2
FM-1 is not used. Frequency separation
of the two units should be at least 10 mc.
The closer the spacing of the two fre-
quencies the further should be the spacing
of the two antennas.
7-20 ANTENNA INSTALLATION FOR
RP-1 REPEATER. The importance of
obtaining good isolation between the two
antennas cannot be too heavily stressed.
For best operation the two antennas
should be at least 20 feet apart. In some
cases the ground plane antenna may be
mounted above the other antenna and the
ground plane usedas a shield between the
two dipoles. If feedback occurs between
the two transceivers, indicated by squeal-
ing noises from the receiver or, in
severe cases, by chattering of the relay
in the repeater unit, or perhaps lock-up
of the transmitter, it is often possible to
clear this by moving one antenna further
away from the other. A good method for
checking this condition is to open the
squelch of the No. 1 FM-1. Pull plug
P502 from J105 in the No. 1 FM-1. This
will turn on the No. 2 FM-1. If a change
occurs in the hiss level from the No. 1
FM-1, RF energy from the No. 2 FM-1
is getting into the front end of the No. 1
receiver. The condition can be rectified
only byfurther separation of the antennas
or a further separation in frequency. If
the hiss level is reduced by the No. 2
FM-1 transmitter, the repeater may not
shut off when the incoming signal goes off.
7-21 CONTROL ADJUSTMENTS FOR
RP-1 REPEATER. After the repeater is
connected to the FM-1 transceivers as
described above, turn Trip Level Control
R503 counterclockwise until the relay
closes. Move back on the control until
the relay opens. This is the correct set-
ting. Time control R523 controls the
time it takes for the relay to open again
after having been closed by an incoming
signal, oralternatively, by rotation of Level
Control R503. Audio Gain Control R501
is adjusted until proper deviation is ob-
tained from the No. 2 FM-2. The mea-
surement is best made with the aid of a
modulation monitor.
7-22 SUCCESSFUL REPEATER OPERA-
TION. In order to successfully repeat the
signal from A to B or from B to A it*is
necessary for the following conditions to
exist:
1. Transceiver No. 1 FM-1 must re-
ceive a good signal from point A
OGL Be
2. Point A or B must receive a good
signal from No. 2 FM-1._ The
repeater cannot improve a poor
signal-to-noise received at No. 1
FM-1.
3. The antenna connected to No. 1
FM-1 must be as far removed as
possible from that of No. 2 FM-1.
Preferably No.1 FM-1 shouldbe at
one endof the frequency range cov-
ered by the FM-1 and FM-5 equip-
ments and No.2 FM-1at the other.
(Et
SBE SCHEMATIC DIAGRAM ¥-4
7-23 THEORY OF OPERATION FOR
RP-1 REPEATER. The presence of a
signal in an FM receiver using full limit-
ing will cause a reduction in the noise
output of the discriminator. This change
in noise level, besides being used to op-
erate a receiver squelch is also used to
automatically operate a repeater unit.
The RP-1 repeater unit obtains its noise
voltage via a cable from the receiver
portion of the No. 1 FM-1. The noise
voltage is amplified by transistors Q501
and Q502. The amplitude of the input
signal level is controlled by potentiom-
eter R503. Diodes D501 and D502 rectify
the noise produced by Q502. The negative
going dc voltage is then applied to the
base of de amplifier Q503, causing this
stage to be cut off and the collector volt-
age almostat the supply voltage potential.
This high positive voltage is now applied
to the base of PNP amplifier Q504 which
causes this stage also to be cut off and
the relay to open. The three other stages
are inoperative. When a signal causes
the noise output from Q502 to fall, the dc
output from D501 and D502 also falls, and
transistors Q503 and Q504 conduct. Bias
voltage is applied to the base of Q503 via
R520, Q508 conductérs and the relay
closes. This applies +12 volts to the
No. 2 FM-1, allowing the transmitter
portion of this unit to operate. The audio
7-8
signal from the No. 1 FM-1 is conducted
via the cables and the audio gain control
R501 to the No. 2 FM-1. When Q504
caused the relay to close, diode gate
D504, which had previously been closed,
now opens and capacitor C513 begins to
discharge through R524 and R523.
7-24 The values of C513 and resistors
R524 and R523 are selected so that at the
end of three minutes the voltage across
the capacitor has fallen to a value suffi-
cient to cause unijunction transistor Q505
to fire, causing a sharp spike to be
applied to the silicon-controlled rectifier
Q506. Q506 also fires, Q507 conducts,
the bias is removed from Q508 because
Q507 is now saturated and the relay
opens, restoring the FM-1 transceivers
to their normal standby position. If the
signal is removed before the three min-
utes are up, the relay opens andthe FM-1
transceivers revert tothe normal standby
position.
7-25 MAINTENANCE OF THE RP-1
REPEATER. Corrective maintenance
involves two basic requirements: local-
ization of trouble and its isolation. The
localization of trouble is most easily ob-
tained by making use of the voltage
charts. A complete voltage chart is pro-
vided in Table 7-1.
Table 7-1. Voltage Chart For RP-1 Repeater.
N3693
N3693
N3693
N3683
Noise Amp.
Noise Amp.
DC Amp
Switch
mow WS bw
2N1671 | Timer
S.C. R. Switch
S.C. R. Switch
DC Amp
DC Amp
Switch
GEC6U
GEC6U
2N3693
2N3693
2N3567
@ Time = 0 Value. Exponential Delay of Voltage at This Point.
® After Time Out and Q506 (SCR) Fired.
Measurements Made with VOM, 0 - 50 wamp.
(eo)
SECTION VIII
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