NASA Technical Reports Server (NTRS) 19700000172: A 225 MHz FM oscillator with response to 10 MHz

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June 1970 


Brief 70-10179 



NASA TECH BRIEF 



NASA Tech Briefs announce new technology derived from the U.S. space program. They are issued to encourage commercial 
application. Tech Briefs are available on a subscription basis from the Clearinghouse for Federal Scientific and Technical 
Information, Springfield, Virginia 22151. Requests for individual copies or questions relating to the Tech Brief program may 
be directed to the Technology Utilization Division, NASA, CodeUT, Washington, D.C. 20546. 


A 225 MHz FM Oscillator with Response to 10 MHz 



A frequency-modulated transistor oscillator has approximately 1.2 MHz/V was achieved with excel- 

been designed for application in wideband television lent linearity, and the oscillator exhibited very little 

transmitters. Tests on an experimental 225-MHz FM spurious amplitude modulation. 

oscillator circuit showed that the design met all sped- The design effort included a theoretical analysis 
fication requirements. Frequency stability was within of the oscillator. A mathematical model of the circuit 

1.0 percent over the temperature range of -25° to adequately predicted the oscillation frequency, and 

85°C. Output power of approximately 120 mW into an iterative computer program yielded results that 
a 50-ohm resistive load was easily obtained. The base- agreed closely with the slope of the deviation charac- 

band modulation response was flat within ±0.5 dB teristic measured experimentally. This analytical 

from dc to 10 MHz. A modulation constant of technique could be employed to aid in the design of 

(continued overleaf) 


This document was prepared under the sponsorship of the National 
Aeronautics and Space Administration. Neither the United States 
Government nor any person acting on behalf of the United States 


Government assumes any liability resulting from the use of the 
information contained in this document, or warrants that such use 
will be free from privately owned rights. 


other oscillators and to analyze existing circuits. 
The technique might possibly be applied to existing 
oscillators in order to eliminate frequency drift due 
to temperature changes. 

The oscillator circuit, represented in the schematic, 
is of the LC Colpitts type. This tank circuit configu- 
ration will provide near-sinusoidal output waveforms 
even when excited by nonsinusoidal currents. The 
circuit also provides a high rate of phase change at 
the resonant frequency, which has the effect of pro- 
ducing good frequency stability. 

A common-collector configuration for the transis- 
tor (Ql) is used primarily because the collector is 
internally connected to the case. Thus, the combined 
effects of case capacitance to ground and heat sink 
capacitance to ground are an aid, rather than a hind- 
rance, for effective rf grounding of the collector. 

The varactor (Q2) is located in series with the 
coil because unusual modulation response was often 
observed when the varactor was placed in parallel 
with the tank circuit. At high frequencies there is 
sufficient internal inductance and lead inductance 
to cause the varactor to enter the series resonant 
mode. If this condition is allowed to exist, a drastic 
reduction in Q will occur producing unpredictable 
modulation response. 

The problem of injecting the modulation signal and 
the bias voltage to the varactor was solved by the 


use of a series trap tuned to 225 MHz and a blocking 
capacitor Cl. This trap, composed of L2,R5, and C4, 
presents a low impedance to modulation frequencies 
and a high impedance to 225 MHz. The design 
premise for such a trap in a modulated oscillator was 
that the Q of the trap should have a low value. This 
restriction was made to avoid undue attenuation of 
the resulting sidebands back through the trap and 
the video amplifier to ground. 

The dc biasing network is of a conventional nature. 
The transistor was biased at approximately 40 mA 
collector current with at approximately 15 V. 
This arrangement will force the transistor to operate 
at a point which will tend to produce small-signal 
class-A oscillation. 

Note: 

Requests for further information may be directed to: 
Technology Utilization Officer 
Marshall Space Flight Center 
Huntsville, Alabama 35812 
Reference: TSP70-10179 
Patent status: 

No patent action is contemplated by NASA. 

Source: Auburn University 
under contract to 
Marshall Space Flight Center 
(MFS-14977) 


Brief 70-10179 


Category 01